No. |
Part Name |
Description |
Manufacturer |
61 |
IRF830B |
500V N-Channel MOSFET |
Fairchild Semiconductor |
62 |
IRF830FI |
Trans MOSFET 500V 3A 3-Pin(3+Tab) ISOWATT220 |
New Jersey Semiconductor |
63 |
IRF830L |
HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A |
International Rectifier |
64 |
IRF830PBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
65 |
IRF830R |
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-262 |
New Jersey Semiconductor |
66 |
IRF830S |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
67 |
IRF830STRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
68 |
IRF830STRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
69 |
IRF831 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
70 |
IRF831 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
71 |
IRF831 |
Trans MOSFET N-CH 450V 4.5A |
New Jersey Semiconductor |
72 |
IRF8313 |
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
73 |
IRF8313PBF |
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
74 |
IRF8313TRPBF |
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
75 |
IRF832 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
76 |
IRF832 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
77 |
IRF832 |
Trans MOSFET N-CH 500V 4A |
New Jersey Semiconductor |
78 |
IRF8327S |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. |
International Rectifier |
79 |
IRF8327STR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. |
International Rectifier |
80 |
IRF833 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
81 |
IRF833 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
82 |
IRF833 |
Trans MOSFET N-CH 450V 4A |
New Jersey Semiconductor |
83 |
IRHLF83Y20 |
20V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package |
International Rectifier |
84 |
ISF83 |
Recovery Rectifier |
Rectron Semiconductor |
85 |
KF836FU |
Cellular Phone |
Korea Electronics (KEC) |
86 |
KF836U |
Cellular Phone |
Korea Electronics (KEC) |
87 |
LC88F83B0A |
16-bit LCD Microcontroller with Integrated 128K-byte FROM and 4240-byte RAM |
ON Semiconductor |
88 |
MB15F83UL |
Fractional-N PLL Frequency Synthesizer |
Fujitsu Microelectronics |
89 |
MBRF835CT |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
90 |
MC56F8300UM |
16-bit Digital Signal Controllers |
Freescale (Motorola) |
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