No. |
Part Name |
Description |
Manufacturer |
31 |
IRF221 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
32 |
IRF221 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
33 |
IRF221 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
34 |
IRF221 |
Trans MOSFET N-CH 150V 5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
35 |
IRF221 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
36 |
IRF222 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
37 |
IRF222 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
38 |
IRF222 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
39 |
IRF222 |
Trans MOSFET N-CH 200V 4A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
40 |
IRF222 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
41 |
IRF223 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
42 |
IRF223 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
43 |
IRF223 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
44 |
IRF223 |
Trans MOSFET N-CH 150V 4A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
45 |
IRF223 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
46 |
IRF224 |
(IRF225) HEXFET Transistors |
International Rectifier |
47 |
IRF224 |
(IRF225) HEXFET Transistors |
International Rectifier |
48 |
IRF230 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
49 |
IRF230 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
50 |
IRF230 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
51 |
IRF230 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
52 |
IRF230 |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
53 |
IRF230 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
54 |
IRF230 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET |
SemeLAB |
55 |
IRF230 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
56 |
IRF230-233 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
57 |
IRF230N |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
58 |
IRF231 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
59 |
IRF231 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
60 |
IRF231 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
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