No. |
Part Name |
Description |
Manufacturer |
91 |
IRF241 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
92 |
IRF241 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
93 |
IRF241 |
16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs |
Intersil |
94 |
IRF241 |
N-CHANNEL POWER MOSFET |
Samsung Electronic |
95 |
IRF241 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 18A |
Siliconix |
96 |
IRF242 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
97 |
IRF242 |
16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs |
Intersil |
98 |
IRF242 |
N-CHANNEL POWER MOSFET |
Samsung Electronic |
99 |
IRF242 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 16A |
Siliconix |
100 |
IRF243 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
101 |
IRF243 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. |
General Electric Solid State |
102 |
IRF243 |
16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs |
Intersil |
103 |
IRF243 |
N-CHANNEL POWER MOSFET |
Samsung Electronic |
104 |
IRF243 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 16A |
Siliconix |
105 |
IRF244 |
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs |
Intersil |
106 |
IRF245 |
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs |
Intersil |
107 |
IRF246 |
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs |
Intersil |
108 |
IRF247 |
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs |
Intersil |
109 |
IRF250 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
110 |
IRF250 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
111 |
IRF250 |
30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFET |
Intersil |
112 |
IRF250 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
113 |
IRF250 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
114 |
IRF250 |
N-CHANNEL POWER MOSFET |
SemeLAB |
115 |
IRF250 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 30A |
Siliconix |
116 |
IRF250CF |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
117 |
IRF250FI |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
118 |
IRF250R |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
119 |
IRF250SMD |
N.CHANNEL POWER MOSFET |
SemeLAB |
120 |
IRF251 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
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