No. |
Part Name |
Description |
Manufacturer |
31 |
IRF422 |
2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs |
Intersil |
32 |
IRF422 |
Trans MOSFET N-CH 500V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
33 |
IRF422 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
34 |
IRF422R |
Trans MOSFET N-CH 500V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
35 |
IRF423 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
36 |
IRF423 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
37 |
IRF423 |
2.2A and 2.5A/ 450V and 500V/ 3.0 and 4.0 Ohm/ N-Channel Power MOSFETs |
Intersil |
38 |
IRF423 |
Trans MOSFET N-CH 450V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
39 |
IRF423 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
40 |
IRF430 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
41 |
IRF430 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
42 |
IRF430 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
43 |
IRF430 |
4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
44 |
IRF430 |
Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
45 |
IRF430 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
46 |
IRF430 |
N-CHANNEL POWER MOSFET |
SemeLAB |
47 |
IRF430 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A |
Siliconix |
48 |
IRF430-433 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
49 |
IRF430R |
Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
50 |
IRF431 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
51 |
IRF431 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
52 |
IRF431 |
4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs |
Intersil |
53 |
IRF431 |
Trans MOSFET N-CH 450V 4.5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
54 |
IRF431 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
55 |
IRF431 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 4.5A |
Siliconix |
56 |
IRF432 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
57 |
IRF432 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
58 |
IRF432 |
4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs |
Intersil |
59 |
IRF432 |
HEXFET POWER MOSFETS |
New Jersey Semiconductor |
60 |
IRF432 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
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