No. |
Part Name |
Description |
Manufacturer |
91 |
IRF443 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 7A |
Siliconix |
92 |
IRF450 |
13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET |
Fairchild Semiconductor |
93 |
IRF450 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
94 |
IRF450 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
95 |
IRF450 |
13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET |
Intersil |
96 |
IRF450 |
N Channel MOSFET |
Microsemi |
97 |
IRF450 |
Trans MOSFET N-CH 500V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
98 |
IRF450 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
99 |
IRF450 |
N-CHANNEL POWER MOSFET |
SemeLAB |
100 |
IRF450 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 13A |
Siliconix |
101 |
IRF450R |
Trans MOSFET N-CH 500V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
102 |
IRF451 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
103 |
IRF451 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
104 |
IRF451 |
Trans MOSFET 450V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
105 |
IRF451 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
106 |
IRF451 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 13A |
Siliconix |
107 |
IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
108 |
IRF452 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
109 |
IRF452 |
Trans MOSFET 500V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
110 |
IRF452 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
111 |
IRF452 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 12A |
Siliconix |
112 |
IRF452R |
Trans MOSFET 500V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
113 |
IRF453 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
114 |
IRF453 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
115 |
IRF453 |
Trans MOSFET 450V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
116 |
IRF453 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
117 |
IRF453 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 12A |
Siliconix |
118 |
IRF460 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
119 |
IRF460 |
Trans MOSFET N-CH 500V 21A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
120 |
IRF460 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
SemeLAB |
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