No. |
Part Name |
Description |
Manufacturer |
31 |
IRF610S |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
32 |
IRF610S |
Trans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
33 |
IRF610STRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
34 |
IRF610STRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
35 |
IRF611 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
36 |
IRF611 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
37 |
IRF611 |
Trans MOSFET N-CH 150V 2.5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
38 |
IRF612 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
39 |
IRF612 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
40 |
IRF612 |
Trans MOSFET N-CH 200V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
41 |
IRF613 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
42 |
IRF613 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
43 |
IRF613 |
Trans MOSFET N-CH 150V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
44 |
IRF614 |
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
45 |
IRF614 |
2.0A/ 250V/ 2.0 Ohm/ N-Channel Power MOSFET |
Intersil |
46 |
IRF614B |
250V N-Channel MOSFET |
Fairchild Semiconductor |
47 |
IRF614B_FP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A |
Fairchild Semiconductor |
48 |
IRF614B_FP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A |
Fairchild Semiconductor |
49 |
IRF614B_FP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A |
Fairchild Semiconductor |
50 |
IRF614PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
51 |
IRF614S |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
52 |
IRF6150 |
-20V Dual P-Channel HEXFET Power MOSFET in a 16-Lead FlipFET package |
International Rectifier |
53 |
IRF6156 |
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET |
International Rectifier |
54 |
IRF620 |
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
55 |
IRF620 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
56 |
IRF620 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
57 |
IRF620 |
5.0A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET |
Intersil |
58 |
IRF620 |
Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
59 |
IRF620 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
60 |
IRF620 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
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