| No. |
Part Name |
Description |
Manufacturer |
| 151 |
IRF630NSTRLPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 152 |
IRF630NSTRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 153 |
IRF630NSTRR |
Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R |
New Jersey Semiconductor |
| 154 |
IRF630S |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 155 |
IRF630S |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
| 156 |
IRF630S |
N-channel TrenchMOS transistor |
Philips |
| 157 |
IRF630S |
N - CHANNEL 200V - 0.35 Ohm -9A-D 2 PAK MESH OVERLAY MOSFET |
SGS Thomson Microelectronics |
| 158 |
IRF630S |
N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET |
ST Microelectronics |
| 159 |
IRF630SPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 160 |
IRF630ST4 |
N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET |
ST Microelectronics |
| 161 |
IRF630STRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 162 |
IRF630STRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 163 |
IRF631 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 164 |
IRF631 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 165 |
IRF631 |
Trans MOSFET N-CH 150V 9A |
New Jersey Semiconductor |
| 166 |
IRF632 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 167 |
IRF632 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 168 |
IRF632 |
Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 169 |
IRF632R |
Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 170 |
IRF633 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 171 |
IRF633 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 172 |
IRF633 |
Trans MOSFET N-CH 150V 8A |
New Jersey Semiconductor |
| 173 |
IRF634 |
Advanced Power MOSFET |
Fairchild Semiconductor |
| 174 |
IRF634 |
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 175 |
IRF634 |
Trans MOSFET N-CH 250V 8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 176 |
IRF634 |
N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFET |
SGS Thomson Microelectronics |
| 177 |
IRF634 |
N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFET |
ST Microelectronics |
| 178 |
IRF634A |
Advanced Power MOSFET |
Fairchild Semiconductor |
| 179 |
IRF634B |
250V N-Channel MOSFET |
Fairchild Semiconductor |
| 180 |
IRF634B_FP001 |
250V N-Channel B-FET / Substitute of IRF634 & IRF634A |
Fairchild Semiconductor |
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