| No. |
Part Name |
Description |
Manufacturer |
| 211 |
IRF640FP |
N-CHANNEL 200V - 0.150 OHM - 18A TO-220/TO-220FP MESH OVERLAY MOSFET |
ST Microelectronics |
| 212 |
IRF640L |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 213 |
IRF640LPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 214 |
IRF640N |
N-Channel Power MOSFETs 200V, 18A, 0.15-Ohm |
Fairchild Semiconductor |
| 215 |
IRF640N |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 216 |
IRF640NL |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 217 |
IRF640NLPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 218 |
IRF640NPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 219 |
IRF640NS |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 220 |
IRF640NSPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 221 |
IRF640NSTR |
N-channel power MOSFET for fast switching applications, 200V, 18A |
International Rectifier |
| 222 |
IRF640NSTRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 223 |
IRF640NSTRLPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 224 |
IRF640NSTRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 225 |
IRF640NSTRRPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 226 |
IRF640PBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 227 |
IRF640S |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 228 |
IRF640S |
N-channel TrenchMOS transistor |
Philips |
| 229 |
IRF640S |
N - CHANNEL 200V - 0.150Ohm - 18A TO-263 MESH OVERLAY MOSFET |
SGS Thomson Microelectronics |
| 230 |
IRF640S |
N-CHANNEL 200V - 0.150 OHM -18A TO-263 MESH OVERLAY MOSFET |
ST Microelectronics |
| 231 |
IRF640SPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 232 |
IRF640STR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 233 |
IRF640STRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 234 |
IRF640STRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 235 |
IRF641 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 236 |
IRF641 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
| 237 |
IRF642 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 238 |
IRF642 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. |
General Electric Solid State |
| 239 |
IRF643 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 240 |
IRF644 |
250V N-Channel MOSFET |
Fairchild Semiconductor |
| | | |
