| No. |
Part Name |
Description |
Manufacturer |
| 271 |
IRF646 |
14A, 275V, 0.280 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 272 |
IRF646 |
14A/ 275V/ 0.280 Ohm/ N-Channel Power MOSFET |
Intersil |
| 273 |
IRF650 |
200V N-Channel MOSFET |
Fairchild Semiconductor |
| 274 |
IRF650B |
200V N-Channel MOSFET |
Fairchild Semiconductor |
| 275 |
IRF650B_FP001 |
200V N-Channel B-FET / Substitute of IRF650A |
Fairchild Semiconductor |
| 276 |
IRF650B_FP001 |
200V N-Channel B-FET / Substitute of IRF650A |
Fairchild Semiconductor |
| 277 |
IRF654 |
250V N-Channel MOSFET |
Fairchild Semiconductor |
| 278 |
IRF654B |
250V N-Channel MOSFET |
Fairchild Semiconductor |
| 279 |
IRF654B_FP001 |
250V N-Channel B-FET / Substitute of IRF654A |
Fairchild Semiconductor |
| 280 |
IRF654B_FP001 |
250V N-Channel B-FET / Substitute of IRF654A |
Fairchild Semiconductor |
| 281 |
IRF6601 |
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
| 282 |
IRF6602 |
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
| 283 |
IRF6602TR1 |
HEXFET Power MOSFET |
International Rectifier |
| 284 |
IRF6603 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
| 285 |
IRF6604 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
| 286 |
IRF6607 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
| 287 |
IRF6607TR1 |
Power MOSFET |
International Rectifier |
| 288 |
IRF6608 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
| 289 |
IRF6609 |
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
| 290 |
IRF6609TR1 |
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
| 291 |
IRF6609TR1PBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 292 |
IRF6609TRPBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 293 |
IRF6610 |
HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM |
International Rectifier |
| 294 |
IRF6610TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 66 amperes. |
International Rectifier |
| 295 |
IRF6611 |
DirectFET Power MOSFET |
International Rectifier |
| 296 |
IRF6611TR1 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 297 |
IRF6611TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 298 |
IRF6612 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
| 299 |
IRF6612TR1 |
HEXFET Power MOSFET |
International Rectifier |
| 300 |
IRF6612TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 136 amperes. |
International Rectifier |
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