| No. |
Part Name |
Description |
Manufacturer |
| 31 |
ADG1436 |
1.5 Ω On Resistance, ±15 V/12 V/±5 V, mes new roman">iCMOS®, Dual SPDT Switch |
Analog Devices |
| 32 |
AN8847 |
Head amplifier IC for CD-ROM drive for 32 times speed or more |
Panasonic |
| 33 |
AN8847SB |
Head amplifier IC for CD-ROM drive for 32 times speed or more |
Panasonic |
| 34 |
AN8849SA |
Head amplifier IC for CD-ROM drive (for 24 times speed or more) |
Panasonic |
| 35 |
AN8882 |
Head amplifier IC for CD-ROM drive for 32 times speed or more |
Panasonic |
| 36 |
BAS116 |
Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode) |
Siemens |
| 37 |
BAV170 |
Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode) |
Siemens |
| 38 |
BAV199 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Connected in series) |
Siemens |
| 39 |
BAW156 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode) |
Siemens |
| 40 |
BSW72 |
PNP silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
| 41 |
BSW73 |
PNP silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
| 42 |
BSW74 |
PNP silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
| 43 |
BSW75 |
PNP silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
| 44 |
BSW82 |
NPN silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
| 45 |
BSW83 |
NPN silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
| 46 |
BSW84 |
NPN silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
| 47 |
BSW85 |
NPN silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
| 48 |
CF739 |
GaAs FET (N-channel dual-gate GaAs MES FET) |
Siemens |
| 49 |
E702360_SH7058 |
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. |
Renesas |
| 50 |
GN1010 |
GaAs N-Channel MES IC |
Panasonic |
| 51 |
GN1021 |
GaAs N Channel MES Type IC |
Matsushita Electric Works(Nais) |
| 52 |
GN1022 |
GaAs N Channel MES Type IC |
Matsushita Electric Works(Nais) |
| 53 |
HA17431 |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 54 |
HA17431VLTP |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 55 |
HA17431VUP |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 56 |
HA17432VLTP |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 57 |
HA17432VUP |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 58 |
IS1604 |
OPIC Light Detector for 4 times Speed CD-ROM Drive |
SHARP |
| 59 |
LC78840M |
Four-times or Eight-times Oversampling Digital Filter |
SANYO |
| 60 |
LC78840M |
Four-times or Eight-times Oversampling Digital Filter |
SANYO |
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