| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 32 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 33 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 34 |
21-0136F |
PACKAGE OUTLINE 12,16L THIN QFN, 3x3x0.8mm |
MAXIM - Dallas Semiconductor |
| 35 |
21-0147C |
PACKAGE OUTLINE, 6L UDFN, 1.5 X 1.0 X 0.8mm |
MAXIM - Dallas Semiconductor |
| 36 |
2114BF |
Hybrid Circuit SWITCH used for high level multiplexing, A/D conversion, telemetry, and chopper applications |
Amelco Semiconductor |
| 37 |
24W_POWER_PLUG |
POWER PLUG AC/DC SMPS, WALL PLUG IN, 24 WATT |
ST Microelectronics |
| 38 |
289 |
Precision, Wide Bandwidth, Synchronized Isolation Amplifier |
Intronics |
| 39 |
289J |
Precision, Wide Bandwidth, Synchronized Isolation Amplifier |
Intronics |
| 40 |
289K |
Precision, Wide Bandwidth, Synchronized Isolation Amplifier |
Intronics |
| 41 |
289L |
Precision, Wide Bandwidth, Synchronized Isolation Amplifier |
Intronics |
| 42 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 43 |
2N2586 |
NPN Transistor General Purpose, low noise, high current gain, low leakage |
Amelco Semiconductor |
| 44 |
2N2708 |
NPN transistor RF/IF Amplifier, high power gain, low capacitance |
Amelco Semiconductor |
| 45 |
2N3054 |
Silicon HOMETAXIAL NPN, medium power switch |
SGS-ATES |
| 46 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 47 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 48 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 49 |
2N3282 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 50 |
2N4416 |
Wideband, High Gain, Single, N- Channel JFET |
Linear Systems |
| 51 |
2N4416A |
Wideband, High Gain, Single, N- Channel JFET |
Linear Systems |
| 52 |
2N499 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 53 |
2N499A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 54 |
2N502 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 55 |
2N502A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 56 |
2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 57 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 58 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 59 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 60 |
2N6655 |
Silicon NPN, High Power, High Voltage Switching Transistor |
IPRS Baneasa |
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