| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 62 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 63 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 64 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 65 |
2N6655 |
Silicon NPN, High Power, High Voltage Switching Transistor |
IPRS Baneasa |
| 66 |
2N6655A |
Silicon NPN, High Power, High Voltage Switching Transistor |
IPRS Baneasa |
| 67 |
2N6655B |
Silicon NPN, High Power, High Voltage Switching Transistor |
IPRS Baneasa |
| 68 |
2SA1682 |
PNP Epitaxial Planar Silicon Transistor TV Camera Deflection, High-Voltage Driver Applications |
SANYO |
| 69 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 70 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
| 71 |
2SA352 |
Germanium PNP Transistor Drift Junction, intended for use in SW Mixer |
Hitachi Semiconductor |
| 72 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 73 |
2SA354 |
Germanium PNP Transistor Drift Junction, intended for use in MW Frequency Converter |
Hitachi Semiconductor |
| 74 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 75 |
2SB496 |
Germanium Transistor PNP Alloyed Junction, intended for use in Complementary Symmetry Power Output |
Hitachi Semiconductor |
| 76 |
2SB66H |
Germanium Transistor PNP Alloyed Junction, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 77 |
2SC150T |
Silicon NPN Transistor Low Temperature Passivation, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 78 |
2SC154C |
Silicon NPN Transistor Triple Diffused Low Temperature Passivation, intended for use in High Voltage and Wide bandwidth video power output |
Hitachi Semiconductor |
| 79 |
2SC2481 |
Silicon NPN epitaxial transistor, color TV vert. deflection, class B sound output applications |
TOSHIBA |
| 80 |
2SC3651 |
High Gain, Low Frequency, General Purpose NPN Amplifier Transistor |
ON Semiconductor |
| 81 |
2SC4449 |
NPN Triple Diffused Planar Silicon Transistor TV Camera Deflection, High-Voltage Driver Applications |
SANYO |
| 82 |
2SC680 |
Silicon NPN Triple Diffused Transistor, intended for use in 12 Inches TV, Vertical Deflection, Power Output |
Hitachi Semiconductor |
| 83 |
2SC680A |
Silicon NPN Triple Diffused Transistor, intended for use in 17 Inches TV, Vertical Deflection, Power Output |
Hitachi Semiconductor |
| 84 |
2ZC100 |
Zener diode for constant voltage regulation, telephone, printer uses |
TOSHIBA |
| 85 |
2ZC110 |
Zener diode for constant voltage regulation, telephone, printer uses |
TOSHIBA |
| 86 |
2ZC120 |
Zener diode for constant voltage regulation, telephone, printer uses |
TOSHIBA |
| 87 |
420E212 |
12V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops |
Protek Devices |
| 88 |
420E225 |
25V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops |
Protek Devices |
| 89 |
420E228 |
28V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops |
Protek Devices |
| 90 |
420E236 |
36V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops |
Protek Devices |
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