| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2N3055 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 32 |
2N3055S |
NPN Power transistor Homobase - LF amplifier and switching, complementary BDX18 |
SESCOSEM |
| 33 |
2N331 |
PNP germanium transistor for audio range amplifier and switching service in military equipment |
Motorola |
| 34 |
2N3441 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 35 |
2N3442 |
NPN Power transistor Homobase - LF amplifier and switching, complementary BDX20 |
SESCOSEM |
| 36 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 37 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 38 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 39 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 40 |
2N3740 |
PNP Power Transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 41 |
2N3741 |
PNP Power Transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 42 |
2N3771 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 43 |
2N3772 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 44 |
2N3773 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 45 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 46 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 47 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 48 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 49 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 50 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 51 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 52 |
2N4347 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 53 |
2N4348 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 54 |
2N4901 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 55 |
2N4902 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 56 |
2N4903 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 57 |
2N4904 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 58 |
2N4905 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 59 |
2N4906 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 60 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
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