| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 92 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 93 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 94 |
2N6098 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 95 |
2N6099 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM141 |
SESCOSEM |
| 96 |
2N6099 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 97 |
2N6100 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 98 |
2N6101 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM142 |
SESCOSEM |
| 99 |
2N6101 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 100 |
2N6102 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 101 |
2N6103 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 102 |
2N6107 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 |
SESCOSEM |
| 103 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
| 104 |
2N6111 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 |
SESCOSEM |
| 105 |
2N6121 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 106 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 107 |
2N6122 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 108 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 109 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 110 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 111 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 112 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 113 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 114 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 115 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 116 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 117 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 118 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 119 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 120 |
2N7000A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
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