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Datasheets for NTEN

Datasheets found :: 1423
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 1S754H Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source Hitachi Semiconductor
32 1S755H Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source Hitachi Semiconductor
33 1S756H Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source Hitachi Semiconductor
34 1S757H Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
35 1S758H Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
36 1S759H Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
37 1S760H Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source Hitachi Semiconductor
38 1S761H Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
39 1S762H Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
40 1S763H Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
41 1S764H Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
42 1S765H Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
43 1S77H Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching Hitachi Semiconductor
44 1S78H Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching Hitachi Semiconductor
45 1S79H Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching Hitachi Semiconductor
46 1S80 Germanium Point Contact Diode, intended for use as a General Detector Hitachi Semiconductor
47 1SV268 Transmitting, Receiving Antenna-switch Use PIN Diode Silicon Epitaxial Type SANYO
48 1SV272 Transmitting, Receiving Antenna-switch Use PIN Diode Silicon Epitaxial Type SANYO
49 2N2857 Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz SGS-ATES
50 2N3118 Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment RCA Solid State
51 2N3262 Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers RCA Solid State
52 2N3839 Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise SGS-ATES
53 2N5179 Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz SGS-ATES
54 2SA12 Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier Hitachi Semiconductor
55 2SA12H Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier Hitachi Semiconductor
56 2SA15 Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter Hitachi Semiconductor
57 2SA15H Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier Hitachi Semiconductor
58 2SA17H Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
59 2SA18H Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
60 2SA234 Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter Hitachi Semiconductor


Datasheets found :: 1423
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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