| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2SB368H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
| 92 |
2SB370 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 93 |
2SB370A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 94 |
2SB370AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, Low Speed Switching |
Hitachi Semiconductor |
| 95 |
2SB459 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 96 |
2SB460 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 97 |
2SB468 |
Germanium Transistor PNP Diffused Base Alloyed Emitter, intended for use in TV Horizontal Deflection Power Output |
Hitachi Semiconductor |
| 98 |
2SB471 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 99 |
2SB472 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 100 |
2SB496 |
Germanium Transistor PNP Alloyed Junction, intended for use in Complementary Symmetry Power Output |
Hitachi Semiconductor |
| 101 |
2SB66H |
Germanium Transistor PNP Alloyed Junction, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 102 |
2SB75 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 103 |
2SB75A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 104 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 105 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 106 |
2SB77 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 107 |
2SB77A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 108 |
2SC1055H |
Transistor Silicon NPN Triple Diffused, intended for use in Power Switching Regulator |
Hitachi Semiconductor |
| 109 |
2SC1059 |
Transistor Silicon NPN Triple Diffused LTP, intended for use in Class A Output Amplifier |
Hitachi Semiconductor |
| 110 |
2SC1060 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
| 111 |
2SC1061 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
| 112 |
2SC116T |
Silicon Transistor NPN Triple Diffued Planar, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 113 |
2SC150T |
Silicon NPN Transistor Low Temperature Passivation, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 114 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 115 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 116 |
2SC154C |
Silicon NPN Transistor Triple Diffused Low Temperature Passivation, intended for use in High Voltage and Wide bandwidth video power output |
Hitachi Semiconductor |
| 117 |
2SC154H |
Silicon NPN Triple Diffused LPT Transistor, intended for use in Wide Band Amplifier, High Voltage Switching |
Hitachi Semiconductor |
| 118 |
2SC280H |
Silicon NPN Epitaxial LTP Twin Transistor, intended for use in DC Amplifier |
Hitachi Semiconductor |
| 119 |
2SC281 |
Silicon NPN Epitaxial LTP Transistor Vcbo=30V, Pc=200mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 120 |
2SC281H |
Silicon NPN Epitaxial LTP Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
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