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Datasheets for NTEND

Datasheets found :: 326
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No. Part Name Description Manufacturer
31 1S762H Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
32 1S763H Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
33 1S764H Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
34 1S765H Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
35 1S77H Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching Hitachi Semiconductor
36 1S78H Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching Hitachi Semiconductor
37 1S79H Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching Hitachi Semiconductor
38 1S80 Germanium Point Contact Diode, intended for use as a General Detector Hitachi Semiconductor
39 2N2857 Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz SGS-ATES
40 2N3118 Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment RCA Solid State
41 2N3262 Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers RCA Solid State
42 2N3375 Silicon Epitaxial Planar Overlay Transistor, collector connected to the case, intended for VHF/UHF transmitting Philips
43 2N3440S Silicon planar epitaxial NPN transistor intended for high voltage switching and linear amplifier applications SGS-ATES
44 2N3632 Silicon Epitaxial Planar Overlay Transistor, intended for VHF transmitting Philips
45 2N3839 Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise SGS-ATES
46 2N5179 Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz SGS-ATES
47 2SA12 Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier Hitachi Semiconductor
48 2SA12H Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier Hitachi Semiconductor
49 2SA15 Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter Hitachi Semiconductor
50 2SA15H Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier Hitachi Semiconductor
51 2SA17H Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
52 2SA18H Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
53 2SA234 Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter Hitachi Semiconductor
54 2SA235 Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter Hitachi Semiconductor
55 2SA350 Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier Hitachi Semiconductor
56 2SA351 Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter Hitachi Semiconductor
57 2SA352 Germanium PNP Transistor Drift Junction, intended for use in SW Mixer Hitachi Semiconductor
58 2SA353 Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier Hitachi Semiconductor
59 2SA354 Germanium PNP Transistor Drift Junction, intended for use in MW Frequency Converter Hitachi Semiconductor
60 2SA355 Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier Hitachi Semiconductor


Datasheets found :: 326
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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