| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2SC717 |
Silicon NPN Epitaxial Planar Transistor, intended for use in VHF RF Amplifier, Mixer, Oscillator |
Hitachi Semiconductor |
| 152 |
2SC830 |
Silicon NPN Triple Diffused Transistor, intended for use in HiFi Amp. Power Output |
Hitachi Semiconductor |
| 153 |
2SC830H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
| 154 |
2SC856 |
Silicon NPN Triple Diffused LTP Transistor, intended for use in Video Power Output |
Hitachi Semiconductor |
| 155 |
2SC857H |
Silicon NPN Triple Diffused LTP Transistor, intended for use in High Voltage Switching |
Hitachi Semiconductor |
| 156 |
2SC897 |
Silicon NPN Triple Diffused Transistor, intended for use in 35~50W Hi Fi Output |
Hitachi Semiconductor |
| 157 |
2SC898 |
Silicon NPN Triple Diffused Transistor, intended for use in Hi Fi Power Output |
Hitachi Semiconductor |
| 158 |
2SC89H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 159 |
2SC907AH |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 160 |
2SC907H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 161 |
2SC90H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 162 |
2SC917 |
Silicon NPN Planar Transistor, intended for use in TV Video IF Final Stage |
Hitachi Semiconductor |
| 163 |
2SC91H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 164 |
2SC935 |
Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Stabilized Power Supply |
Hitachi Semiconductor |
| 165 |
2SC936 |
Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Vertical Deflection Output |
Hitachi Semiconductor |
| 166 |
2SC937 |
Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Horizontal Deflection Output |
Hitachi Semiconductor |
| 167 |
2SC984 |
Silicon NPN Epitaxial Planar Transistor, intended for use in Hi Fi Power Output |
Hitachi Semiconductor |
| 168 |
2SC984H |
Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 169 |
2SD77AH |
Germanium NPN Alloyed Junction Transistor, intended for use in Low Speed Switching and Audio Frequency Power Output |
Hitachi Semiconductor |
| 170 |
2SD96 |
Germanium NPN Alloyed Junction Transistor, intended for use in Complementary Symmetry Power Output |
Hitachi Semiconductor |
| 171 |
3SK21H |
Silicon N-Channel MOS Type FET Transistor, intended for use in Chopper |
Hitachi Semiconductor |
| 172 |
3SK30 |
Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer |
Hitachi Semiconductor |
| 173 |
3SK30A |
Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer |
Hitachi Semiconductor |
| 174 |
AA112 |
Germanium point contact diode, intended for use in video and audio detection circuits |
IPRS Baneasa |
| 175 |
AA131 |
Germanium Point Contact Diode, is intended for use in low impedance detection circuits and A.G.C. damper |
IPRS Baneasa |
| 176 |
AC183 |
Ge-ALLOY-npn TRANSISTOR are intended for use in low frequency preamplifier an driver stages |
IPRS Baneasa |
| 177 |
ACD82224 |
Single chip implementation of 24-port 10/100 ethernet switch system intended for IEEE 802.3 and 802.3u compatible networks. |
Advanced Communication Devices |
| 178 |
AD130 |
Transistor are intended for use in DC-AC converters, regulators of DC voltage, low frequency power output stages |
IPRS Baneasa |
| 179 |
AD131 |
Transistor are intended for use in DC-AC converters, regulators of DC voltage, low frequency power output stages |
IPRS Baneasa |
| 180 |
AD132 |
Transistor are intended for use in DC-AC converters, regulators of DC voltage, low frequency power output stages |
IPRS Baneasa |
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