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Datasheets for NTEND

Datasheets found :: 326
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No. Part Name Description Manufacturer
151 2SC708H Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching Hitachi Semiconductor
152 2SC717 Silicon NPN Epitaxial Planar Transistor, intended for use in VHF RF Amplifier, Mixer, Oscillator Hitachi Semiconductor
153 2SC830 Silicon NPN Triple Diffused Transistor, intended for use in HiFi Amp. Power Output Hitachi Semiconductor
154 2SC830H Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Output, Medium Power Switching Hitachi Semiconductor
155 2SC856 Silicon NPN Triple Diffused LTP Transistor, intended for use in Video Power Output Hitachi Semiconductor
156 2SC857H Silicon NPN Triple Diffused LTP Transistor, intended for use in High Voltage Switching Hitachi Semiconductor
157 2SC897 Silicon NPN Triple Diffused Transistor, intended for use in 35~50W Hi Fi Output Hitachi Semiconductor
158 2SC898 Silicon NPN Triple Diffused Transistor, intended for use in Hi Fi Power Output Hitachi Semiconductor
159 2SC89H Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
160 2SC907AH Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching Hitachi Semiconductor
161 2SC907H Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching Hitachi Semiconductor
162 2SC90H Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
163 2SC917 Silicon NPN Planar Transistor, intended for use in TV Video IF Final Stage Hitachi Semiconductor
164 2SC91H Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
165 2SC935 Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Stabilized Power Supply Hitachi Semiconductor
166 2SC936 Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Vertical Deflection Output Hitachi Semiconductor
167 2SC937 Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Horizontal Deflection Output Hitachi Semiconductor
168 2SC984 Silicon NPN Epitaxial Planar Transistor, intended for use in Hi Fi Power Output Hitachi Semiconductor
169 2SC984H Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier Hitachi Semiconductor
170 2SD77AH Germanium NPN Alloyed Junction Transistor, intended for use in Low Speed Switching and Audio Frequency Power Output Hitachi Semiconductor
171 2SD96 Germanium NPN Alloyed Junction Transistor, intended for use in Complementary Symmetry Power Output Hitachi Semiconductor
172 3SK21H Silicon N-Channel MOS Type FET Transistor, intended for use in Chopper Hitachi Semiconductor
173 3SK30 Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer Hitachi Semiconductor
174 3SK30A Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer Hitachi Semiconductor
175 AA112 Germanium point contact diode, intended for use in video and audio detection circuits IPRS Baneasa
176 AA131 Germanium Point Contact Diode, is intended for use in low impedance detection circuits and A.G.C. damper IPRS Baneasa
177 AC183 Ge-ALLOY-npn TRANSISTOR are intended for use in low frequency preamplifier an driver stages IPRS Baneasa
178 ACD82224 Single chip implementation of 24-port 10/100 ethernet switch system intended for IEEE 802.3 and 802.3u compatible networks. Advanced Communication Devices
179 AD130 Transistor are intended for use in DC-AC converters, regulators of DC voltage, low frequency power output stages IPRS Baneasa
180 AD131 Transistor are intended for use in DC-AC converters, regulators of DC voltage, low frequency power output stages IPRS Baneasa


Datasheets found :: 326
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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