| No. |
Part Name |
Description |
Manufacturer |
| 241 |
BGY52 |
Hybrid VHF push-pull amplifier module, intended for CATV systems |
Philips |
| 242 |
BGY53 |
Hybrid VHF push-pull amplifier module, intended for CATV systems |
Philips |
| 243 |
BGY56 |
Hybrid VHF PUSH-PULL amplifier module intended for CATV systems |
Philips |
| 244 |
BGY57 |
Hybrid VHF PUSH-PULL amplifier module intended for CATV systems |
Philips |
| 245 |
BGY58 |
Hybrid VHF PUSH-PULL amplifier module intended for CATV systems |
Philips |
| 246 |
BGY59 |
Hybrid VHF PUSH-PULL amplifier module intended for CATV systems up to 300MHz |
Philips |
| 247 |
BGY60 |
Interstage hybrid amplifier module intended for CATV systems up to 300MHz |
Philips |
| 248 |
BLF146 |
RF Power MOSFET intended for use in professional transmitters in the HF range |
Philips |
| 249 |
BLV80/28 |
VHF Power NPN silicon planar epitaxial transistor intended for use in base stations in the VHF mobile radio band |
Philips |
| 250 |
BPT1819E03 |
High Performance Silicon Bipolar Transistor Intended |
etc |
| 251 |
BU126 |
Silicon NPN triple diffused MESA high voltage power transistor intended for use in the switched mode power supply of television receivers |
TOSHIBA |
| 252 |
BY176 |
Silicon E.H.T. Rectifier Diode intended for tripler voltage circuits |
Philips |
| 253 |
BY185 |
Silicon E.H.T. Rectifier Diode, intended for use in horizontal deflection |
Philips |
| 254 |
BY187 |
Silicon E.H.T. Rectifier Diode, intended for tripler circuits |
Philips |
| 255 |
BYX13-1000 |
Silicon Rectifier Diode, intended for power rectifier applications, normal polarity |
Philips |
| 256 |
BYX13-1000R |
Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity |
Philips |
| 257 |
BYX13-1200 |
Silicon Rectifier Diode, intended for power rectifier applications, normal polarity |
Philips |
| 258 |
BYX13-1200R |
Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity |
Philips |
| 259 |
BYX13-800 |
Silicon Rectifier Diode, intended for power rectifier applications, normal polarity |
Philips |
| 260 |
BYX13-800R |
Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity |
Philips |
| 261 |
BYX13-SERIES |
Silicon Rectifier Diode, intended for power rectifier applications |
Philips |
| 262 |
BYX35 |
Silicon High Voltage Diode, intended for the high voltage power supply of X-ray, electron microscope and LASER equipment |
Philips |
| 263 |
BZX75 |
Stabistors, diodes with controlled conductance intended for low voltage regulation |
Philips |
| 264 |
BZX75-C1V4 |
Stabistors, diodes with controlled conductance intended for low voltage regulation |
Philips |
| 265 |
BZX75-C2V1 |
Stabistors, diodes with controlled conductance intended for low voltage regulation |
Philips |
| 266 |
BZX75-C2V8 |
Stabistors, diodes with controlled conductance intended for low voltage regulation |
Philips |
| 267 |
BZX75-C3V6 |
Stabistors, diodes with controlled conductance intended for low voltage regulation |
Philips |
| 268 |
CXD1961AQ |
DVB-S Frontend IC(QPSK demodulation+FEC) |
SONY |
| 269 |
EFD105 |
Germanium point contact diode, intended for use in medium speed switching applications |
IPRS Baneasa |
| 270 |
EFD112 |
Germanium Point Contact Diode, is intended for use in low impedance detection circuits and A.G.C. damper |
IPRS Baneasa |
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