| No. |
Part Name |
Description |
Manufacturer |
| 211 |
BFQ32 |
Silicon planar epitaxial PNP transistor in a subminiature plastic transfer-moulded T-package, intended for use in UHF and microwave |
Philips |
| 212 |
BFQ32S |
Silicon planar epitaxial PNP transistor, intended for use in UHF applications |
Philips |
| 213 |
BFQ34T |
Silicon planar epitaxial NPN transistor, intended for wideband amplification applications |
Philips |
| 214 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
| 215 |
BFQ52 |
PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 |
Philips |
| 216 |
BFQ53 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 |
Philips |
| 217 |
BFQ63 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers |
Philips |
| 218 |
BFQ85 |
Epitaxial planar NPN transistor, intended for common-emitter, high gain, wide band application up to 1.5GHz |
SGS-ATES |
| 219 |
BFQ88 |
Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz |
SGS-ATES |
| 220 |
BFQ88A |
Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz |
SGS-ATES |
| 221 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 222 |
BFR90 |
Epitaxial planar NPN transistor, utilizing Planox® silicon nitride, intended for VHF-UHF wide band applications |
SGS-ATES |
| 223 |
BFR90A |
NPN silicon planar epitaxial transistor intended for use in VHF and UHF wideband amplifiers |
Philips |
| 224 |
BFR90B |
Epitaxial planar NPN transistor, intended for high-gain, wide band, low noise application up to 1,5GHz |
SGS-ATES |
| 225 |
BFR90H |
Epitaxial planar NPN transistor, intended for VHF-UHF wide-band application |
SGS-ATES |
| 226 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
| 227 |
BFR96 |
NPN silicon planar epitaxial transistor intended for use in UHF and microwave amplifiers |
Philips |
| 228 |
BFR96S |
NPN silicon planar epitaxial transistor, primarily intended for MATV applications |
Philips |
| 229 |
BFT24 |
NPN transistor, intended for use in UHF low power amplifiers such as in pocket phones, paging systems, etc. |
Philips |
| 230 |
BFT66S |
Epitaxial planar NPN transistor intended for extremely low-noise telecom applications |
SGS-ATES |
| 231 |
BFT95 |
Epitaxial planar PNP transistor intended for high-gain wide-band applications up to 1.5GHz |
SGS-ATES |
| 232 |
BFT95H |
Epitaxial planar PNP transistor intended for common-emitter, high-gain wide band application up to 1.5Ghz |
SGS-ATES |
| 233 |
BFT96 |
Epitaxial planar PNP transistor intended for use as driver or output stage in MATV application up to 800MHz |
SGS-ATES |
| 234 |
BFW16A |
Epitaxial planar NPN transistor intended for CATV-MATV amplifiers |
SGS-ATES |
| 235 |
BFW17A |
Epitaxial planar NPN transistor intended for CATV-MATV amplifiers |
SGS-ATES |
| 236 |
BFW45 |
NPN silicon transistor intended for the output stage of the horizontal deflection amplifier |
ICCE |
| 237 |
BFW92A |
Silicon planar epitaxial NPN transistor intended for use in amplifiers in the 40-860MHz range |
Philips |
| 238 |
BFW93 |
Silicon planar epitaxial NPN transistor, intended for use in VHF - UHF applications, primarily wideband aerial amplifiers 40-800MHz |
Philips |
| 239 |
BGY50 |
Hybrid VHF push-pull amplifier module, intended for CATV systems |
Philips |
| 240 |
BGY51 |
Hybrid VHF push-pull amplifier module, intended for CATV systems |
Philips |
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