| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1214-370M |
Pulsed Power L-Band (Si) |
Microsemi |
| 32 |
1214-370V |
Pulsed Power L-Band (Si) |
Microsemi |
| 33 |
1214-55 |
Pulsed Power L-Band (Si) |
Microsemi |
| 34 |
1214-550P |
Pulsed Power L-Band (Si) |
Microsemi |
| 35 |
1214-700P |
Pulsed Power L-Band (Si) |
Microsemi |
| 36 |
1214-700P1 |
Pulsed Power L-Band (Si) |
Microsemi |
| 37 |
1214-800P |
Pulsed Power L-Band (Si) |
Microsemi |
| 38 |
1318 |
Silicon NPN epitaxial planer type(For low-frequency driver amplification) |
Panasonic |
| 39 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 40 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 41 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 42 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 43 |
1617-35 |
Pulsed Power L-Band (Si) |
Microsemi |
| 44 |
1620B |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
| 45 |
1620G |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
| 46 |
1623G |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
| 47 |
1623R |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
| 48 |
1623RO |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
| 49 |
1623Y |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
| 50 |
163CNQ060 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 51 |
163CNQ080 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 52 |
163CNQ090 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 53 |
163CNQ100 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 54 |
1641G |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
| 55 |
16DL2DZ47A |
HIGH EFFICIENCY DIODE STACK (SWITCHING TYPE POWER LUPPLY APPLICATION) |
TOSHIBA |
| 56 |
16MV4700WX |
N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages |
National Semiconductor |
| 57 |
16MV680WG |
N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages |
National Semiconductor |
| 58 |
1N34AH |
Germanium Point Contact for AM detector or logical circuit |
Hitachi Semiconductor |
| 59 |
1N38AH |
Germanium Point Contact for Limitter Circuit, Small Capacitive Rectifier |
Hitachi Semiconductor |
| 60 |
1N4001 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| | | |
