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Datasheets for R L

Datasheets found :: 13669
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No. Part Name Description Manufacturer
151 2N1652 PNP Germanium power transistor low satturation voltage, fast switching times Motorola
152 2N1653 PNP Germanium power transistor low satturation voltage, fast switching times Motorola
153 2N2285 PNP Germanium power transistor low satturation voltage, fast switching times Motorola
154 2N2286 PNP Germanium power transistor low satturation voltage, fast switching times Motorola
155 2N2287 PNP Germanium power transistor low satturation voltage, fast switching times Motorola
156 2N2330 NPN silicon annular Star transistor for low-level DC/AC chopper applications Motorola
157 2N2331 NPN silicon annular Star transistor for low-level DC/AC chopper applications Motorola
158 2N2369 NPN silicon annular transistor for low-current, high-speed switching applications Motorola
159 2N2483 NPN Silicon Planar Transistor for low-level audio applications Newmarket Transistors NKT
160 2N2484 NPN Silicon Planar Transistor for low-level audio applications Newmarket Transistors NKT
161 2N2573 Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance Motorola
162 2N2574 Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance Motorola
163 2N2575 Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance Motorola
164 2N2576 Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance Motorola
165 2N2577 Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance Motorola
166 2N2578 Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance Motorola
167 2N2579 Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance Motorola
168 2N2639 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
169 2N2640 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
170 2N2641 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
171 2N2642 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
172 2N2643 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
173 2N2644 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
174 2N2944 PNP silicon annular transistor designed for low-level, high-speed chopper applications Motorola
175 2N2945 PNP silicon annular transistor designed for low-level, high-speed chopper applications Motorola
176 2N2946 PNP silicon annular transistor designed for low-level, high-speed chopper applications Motorola
177 2N3043 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
178 2N3044 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
179 2N3045 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
180 2N3046 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola


Datasheets found :: 13669
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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