No. |
Part Name |
Description |
Manufacturer |
151 |
2N1652 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
152 |
2N1653 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
153 |
2N2285 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
154 |
2N2286 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
155 |
2N2287 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
156 |
2N2330 |
NPN silicon annular Star transistor for low-level DC/AC chopper applications |
Motorola |
157 |
2N2331 |
NPN silicon annular Star transistor for low-level DC/AC chopper applications |
Motorola |
158 |
2N2369 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
159 |
2N2483 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
160 |
2N2484 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
161 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
162 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
163 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
164 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
165 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
166 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
167 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
168 |
2N2639 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
169 |
2N2640 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
170 |
2N2641 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
171 |
2N2642 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
172 |
2N2643 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
173 |
2N2644 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
174 |
2N2944 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
175 |
2N2945 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
176 |
2N2946 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
177 |
2N3043 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
178 |
2N3044 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
179 |
2N3045 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
180 |
2N3046 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
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