DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for R L

Datasheets found :: 13566
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 2N3047 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
152 2N3048 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
153 2N3049 Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
154 2N3050 Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
155 2N3055 Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications ITT Semiconductors
156 2N3137 NPN silicon transistor for large signal VHF and UHF applications Motorola
157 2N3227 NPN silicon annular transistor for low-current, high-speed switching applications Motorola
158 2N3295 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
159 2N3296 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
160 2N3297 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
161 2N3375 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
162 2N3553 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
163 2N3632 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
164 2N3713 Epitaxial-base transistor for linear and switching applications SGS-ATES
165 2N3714 Epitaxial-base transistor for linear and switching applications SGS-ATES
166 2N3715 Epitaxial-base transistor for linear and switching applications SGS-ATES
167 2N3716 Epitaxial-base transistor for linear and switching applications SGS-ATES
168 2N3773AR NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. USHA India LTD
169 2N3789 Epitaxial-base transistor for linear and switching applications SGS-ATES
170 2N3790 Epitaxial-base transistor for linear and switching applications SGS-ATES
171 2N3791 Epitaxial-base transistor for linear and switching applications SGS-ATES
172 2N3792 Epitaxial-base transistor for linear and switching applications SGS-ATES
173 2N3796 Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range Motorola
174 2N3797 Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range Motorola
175 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
176 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
177 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
178 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
179 2N3961 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
180 2N4072 NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications Motorola


Datasheets found :: 13566
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



© 2024 - www Datasheet Catalog com