No. |
Part Name |
Description |
Manufacturer |
181 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
182 |
2N4248 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
183 |
2N4249 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
184 |
2N4250 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
185 |
2N4250A |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
186 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
187 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
188 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
189 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
190 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
191 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
192 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
193 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
194 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
195 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
196 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
197 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
198 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
199 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
200 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
201 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
202 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
203 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
204 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
205 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
206 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
207 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
208 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
209 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
210 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
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