DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for R L

Datasheets found :: 13669
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 2N3047 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
182 2N3048 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
183 2N3049 Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
184 2N3050 Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
185 2N3055 Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications ITT Semiconductors
186 2N3137 NPN silicon transistor for large signal VHF and UHF applications Motorola
187 2N3227 NPN silicon annular transistor for low-current, high-speed switching applications Motorola
188 2N3295 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
189 2N3296 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
190 2N3297 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
191 2N3375 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
192 2N3553 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
193 2N3632 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
194 2N3713 Epitaxial-base transistor for linear and switching applications SGS-ATES
195 2N3714 Epitaxial-base transistor for linear and switching applications SGS-ATES
196 2N3715 Epitaxial-base transistor for linear and switching applications SGS-ATES
197 2N3716 Epitaxial-base transistor for linear and switching applications SGS-ATES
198 2N3773AR NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. USHA India LTD
199 2N3789 Epitaxial-base transistor for linear and switching applications SGS-ATES
200 2N3790 Epitaxial-base transistor for linear and switching applications SGS-ATES
201 2N3791 Epitaxial-base transistor for linear and switching applications SGS-ATES
202 2N3792 Epitaxial-base transistor for linear and switching applications SGS-ATES
203 2N3796 Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range Motorola
204 2N3797 Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range Motorola
205 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
206 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
207 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
208 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
209 2N3961 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
210 2N4072 NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications Motorola


Datasheets found :: 13669
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



© 2024 - www Datasheet Catalog com