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Datasheets for R L

Datasheets found :: 13730
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No. Part Name Description Manufacturer
211 2N3961 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
212 2N4072 NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications Motorola
213 2N4073 NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications Motorola
214 2N4248 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
215 2N4249 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
216 2N4250 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
217 2N4250A Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
218 2N4264 NPN silicon transistor designed for low-level, saturated logic applications Motorola
219 2N4265 NPN silicon transistor designed for low-level, saturated logic applications Motorola
220 2N5086 PNP silicon annular transistor designed for low-level, low-noise amplifier applications Motorola
221 2N5087 PNP silicon annular transistor designed for low-level, low-noise amplifier applications Motorola
222 2N5088 NPN silicon annular transistor designed for low-level, low-noise amplifier applications Motorola
223 2N5089 NPN silicon annular transistor designed for low-level, low-noise amplifier applications Motorola
224 2N508A PNP Germanium Milliwatt transistor designed for low noise audio and switching applications Motorola
225 2N5179 Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz SGS-ATES
226 2N5190 Epitaxial-base transistor for linear and switching applications SGS-ATES
227 2N5191 Epitaxial-base transistor for linear and switching applications SGS-ATES
228 2N5192 Epitaxial-base transistor for linear and switching applications SGS-ATES
229 2N5193 Epitaxial-base transistor for linear and switching applications SGS-ATES
230 2N5194 Epitaxial-base transistor for linear and switching applications SGS-ATES
231 2N5195 Epitaxial-base transistor for linear and switching applications SGS-ATES
232 2N5431 Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits Motorola
233 2N5875 Epitaxial-base transistor for linear and switching applications SGS-ATES
234 2N5876 Epitaxial-base transistor for linear and switching applications SGS-ATES
235 2N5877 Epitaxial-base transistor for linear and switching applications SGS-ATES
236 2N5878 Epitaxial-base transistor for linear and switching applications SGS-ATES
237 2N6034 Epitaxial-base darlington transistor for linear and switching applications SGS-ATES
238 2N6035 Epitaxial-base darlington transistor for linear and switching applications SGS-ATES
239 2N6036 Epitaxial-base darlington transistor for linear and switching applications SGS-ATES
240 2N6037 Epitaxial-base darlington transistor for linear and switching applications SGS-ATES


Datasheets found :: 13730
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



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