| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 212 |
2N6051 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 213 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 214 |
2N6053 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 215 |
2N6054 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 216 |
2N6055 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 217 |
2N6056 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 218 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 219 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 220 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 221 |
2N6098 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 222 |
2N6099 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 223 |
2N6100 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 224 |
2N6101 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 225 |
2N6102 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 226 |
2N6103 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 227 |
2N6121 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 228 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 229 |
2N6122 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 230 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 231 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 232 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 233 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 234 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 235 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 236 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 237 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 238 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 239 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 240 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
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