No. |
Part Name |
Description |
Manufacturer |
31 |
2N3421SJANTXV |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
32 |
2N3600 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
33 |
2N3814SJAN |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
34 |
2N3814SJANTX |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
35 |
2N3814SJANTXV |
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
Microsemi |
36 |
2N3839 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
37 |
2N4034 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
38 |
2N4035 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
39 |
2N5109 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
40 |
2N5179 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
41 |
2N707 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
42 |
2N918 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
43 |
69190-405 |
150MA SOT-23 ULTRA LOW NOISE CMOS RF-LDO REGULATOR |
Impala Linear Corporation |
44 |
ASITPR175 |
NPN SILICON RF-MICROWAVE POWER TRANSISTOR |
Advanced Semiconductor |
45 |
ATR2406 |
The ATR2406 is a single chip RF-transceiver intended for applications in the 2.4 GHz ISM band. The QFN32 packaged IC is a complete ... |
Atmel |
46 |
BA4558RF-E2 |
Low Noise Dual Supply Voltage Operational Amplifier |
ROHM |
47 |
BA4560RF-E2 |
Low Noise Dual Supply Voltage Operational Amplifier |
ROHM |
48 |
BA4580RF-E2 |
Low Noise Dual Supply Voltage Operational Amplifier |
ROHM |
49 |
BA4584RF-E2 |
Low Noise Dual Supply Voltage Operational Amplifier |
ROHM |
50 |
BA8522RF-E2 |
Low Offset Dual Supply Voltage Operational Amplifier |
ROHM |
51 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
52 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
53 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
54 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
55 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
56 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
57 |
BF194 |
NPN RF-IF Amp Transistor |
National Semiconductor |
58 |
BF195 |
NPN RF-IF Amp Transistor |
National Semiconductor |
59 |
BF197 |
NPN RF-IF Amp Transistor |
National Semiconductor |
60 |
BF199 |
NPN RF-IF Amp Transistor |
National Semiconductor |
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