| No. |
Part Name |
Description |
Manufacturer |
| 61 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 62 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 63 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 64 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 65 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 66 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 67 |
BF240 |
NPN RF-IF Amp Transistor |
National Semiconductor |
| 68 |
BF241 |
NPN RF-IF Amp Transistor |
National Semiconductor |
| 69 |
BF254 |
RF-IF High Frequency Transistors |
Micro Electronics |
| 70 |
BF254 |
NPN RF-IF Amp Transistor |
National Semiconductor |
| 71 |
BF255 |
NPN RF-IF Amp Transistor |
National Semiconductor |
| 72 |
BF517 |
RF-Bipolar - For amplifier and oscillator applications in TV-tuners |
Infineon |
| 73 |
BF543 |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB |
Infineon |
| 74 |
BF770A |
RF-Bipolar - For IF amplifiers in TV-sat tuners and for VCR modulators |
Infineon |
| 75 |
BF771 |
RF-Bipolar - For modulators and amplifiers in TV and VCR tuners |
Infineon |
| 76 |
BF771W |
RF-Bipolar - For modulators and amplifiers in TV and VCR tuners |
Infineon |
| 77 |
BF772 |
RF-Bipolar - For application in TV-sat tuners |
Infineon |
| 78 |
BF775 |
RF-Bipolar - Especially suitable for TV-Sat and UHF tuners |
Infineon |
| 79 |
BF799 |
RF-Bipolar - For linear broadband amplifier application up to 500 MHz and as SAW filter driver in TV tuners |
Infineon |
| 80 |
BF799W |
RF-Bipolar - For linear broadband amplifier application up to 500 MHz and as SAW filter driver in TV tuners |
Infineon |
| 81 |
BF998 |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 82 |
BF998R |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 83 |
BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB |
Infineon |
| 84 |
BFG135A |
RF-Bipolar - For low-distortion broadband amplifier stages up to 2GHz, Power amplifiers in DECT and PCN systems |
Infineon |
| 85 |
BFG193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
| 86 |
BFG196 |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 87 |
BFG19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 88 |
BFG235 |
RF-Bipolar - For low-distortion broadband output amplifier stages in wireless systems up to 2 GHz |
Infineon |
| 89 |
BFP 181R |
RF-Bipolar NPN Type Transistors with transition frequency of 8 GHz |
Infineon |
| 90 |
BFP 620 |
SiGe70 GHz RF-Bipolar NPN Type Transistors |
Infineon |
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