No. |
Part Name |
Description |
Manufacturer |
31 |
IRF5850TR |
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package |
International Rectifier |
32 |
IRF5850TRPBF |
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package |
International Rectifier |
33 |
IRF5851 |
20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 package |
International Rectifier |
34 |
IRF5851TR |
20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 package |
International Rectifier |
35 |
IRF5851TRPBF |
20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 package |
International Rectifier |
36 |
IRF5852 |
20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 package |
International Rectifier |
37 |
IRF5852TR |
20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 package |
International Rectifier |
38 |
IRF5852TRPBF |
20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 package |
International Rectifier |
39 |
MRF580 |
NPN silicon high frequency transistor fT=5.0GHz/75mA NF=2.0dB/500MHz |
Motorola |
40 |
MRF580A |
NPN silicon high frequency transistor fT=5.0GHz/75mA NF=2.0dB/500MHz |
Motorola |
41 |
MRF581 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
42 |
MRF581 |
NPN silicon high frequency transistor fT=5.0GHz/75mA NF=2.0dB/500MHz |
Motorola |
43 |
MRF581 |
Trans GP BJT NPN 18V 0.2A 4-Pin Macro-X |
New Jersey Semiconductor |
44 |
MRF5811LT1 |
LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON |
Motorola |
45 |
MRF5811MLT1 |
Bipolar Transistor |
New Jersey Semiconductor |
46 |
MRF5812 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
47 |
MRF5812 |
Surface Mounted NPN Silicon RF Low Power Transistor |
Motorola |
48 |
MRF5812 |
Trans GP BJT NPN 15V 0.2A 8-Pin SOIC |
New Jersey Semiconductor |
49 |
MRF5812MR1 |
Trans GP BJT NPN 15V 0.2A 8-Pin SOIC |
New Jersey Semiconductor |
50 |
MRF5812MR2 |
Trans GP BJT NPN 15V 0.2A 8-Pin SOIC |
New Jersey Semiconductor |
51 |
MRF5812R1 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
52 |
MRF5812R2 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
53 |
MRF581A |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
54 |
MRF581A |
NPN silicon high frequency transistor fT=5.0GHz/75mA NF=2.0dB/500MHz |
Motorola |
55 |
MRF581A |
Trans GP BJT NPN 15V 0.2A 4-Pin Macro-X |
New Jersey Semiconductor |
56 |
MRF581AG |
Trans GP BJT NPN 15V 0.2A 4-Pin Macro-X |
New Jersey Semiconductor |
57 |
MRF581M |
Trans GP BJT NPN 18V 0.2A 4-Pin Macro-X |
New Jersey Semiconductor |
58 |
MRF586 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
59 |
MRF586 |
NPN silicon high frequency transistor NF=3.0dB/0.5GHz |
Motorola |
60 |
MRF587 |
High-frequency transistor NPN silicon |
MA-Com |
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