| No. |
Part Name |
Description |
Manufacturer |
| 61 |
MRF587 |
HIGH-FREQUENCY TRANSISTOR NPN SILICON |
Motorola |
| 62 |
MRF587 |
HIGH-FREQUENCY TRANSISTOR NPN SILICON |
Tyco Electronics |
| 63 |
PB-IRF5800 |
Leaded -30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 64 |
PB-IRF5801 |
Leaded 200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 65 |
PB-IRF5802 |
Leaded 150V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 66 |
PB-IRF5803 |
Leaded -40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 67 |
PB-IRF5803D2 |
Leaded -40V FETKY - MOSFET and Schottky Diode in a SO-8 package |
International Rectifier |
| 68 |
PB-IRF5805 |
Leaded -30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 69 |
PB-IRF5806 |
Leaded -20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 70 |
PB-IRF5810 |
Leaded -20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package |
International Rectifier |
| 71 |
PB-IRF5850 |
Leaded -20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package |
International Rectifier |
| 72 |
PB-IRF5851 |
Leaded 20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 package |
International Rectifier |
| 73 |
PB-IRF5852 |
Leaded 20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 package |
International Rectifier |
| 74 |
ST16RF58 |
Smartcard MCU With 8176 Bytes EEPROM for Contactless/Contact Applications |
SGS Thomson Microelectronics |
| 75 |
ST16RF58 |
SMARTCARD MCU WITH 8176 BYTES EEPROM FOR CONTACTLESS/CONTACT APPLICATIONS |
SGS Thomson Microelectronics |
| 76 |
ST16RF58 |
Contactless ISO 14443-B Smartcard IC with 8176 Bytes EEPROM |
ST Microelectronics |
| 77 |
ST16RF58OW40RJLZ |
Contactless ISO 14443-B Smartcard IC with 8176 Bytes EEPROM |
ST Microelectronics |
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