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Datasheets for STOR

Datasheets found :: 44014
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 1416-100 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
32 1416-200 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
33 1417 Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 Vishay
34 1417 Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 Vishay
35 1417-12 1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications SGS Thomson Microelectronics
36 1417-25 1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications SGS Thomson Microelectronics
37 1419 Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series Vishay
38 1419 Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series Vishay
39 1421 Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
40 1421 Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
41 1422 Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
42 1422 Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
43 1442 Bulk Metal Foil Technology, Dual-In-Line Hermetic Resistor Networks Vishay
44 1445 Bulk Metal Foil Technology, Dual-In-Line Hermetic Resistor Networks Vishay
45 1446 Bulk Metal Foil Technology, Dual-In-Line Hermetic Resistor Networks Vishay
46 1457 Bulk Metal Foil Technology, 18 Pin Dual-In-Line Hermetic Resistor Network Vishay
47 1460 Bulk Metal Foil Technology, 20 Pin Dual-In-Line Hermetic Resistor Network Vishay
48 1461 Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks Vishay
49 1463 Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks Vishay
50 1464 Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks Vishay
51 1466 Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks Vishay
52 1474 Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz SGS Thomson Microelectronics
53 1496-3 24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz SGS Thomson Microelectronics
54 14T4 Thiristor - normal series SESCOSEM
55 1511-8 Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz SGS Thomson Microelectronics
56 1517-035 High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems SGS Thomson Microelectronics
57 1526-1 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
58 1526-8 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
59 1527-8 Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications SGS Thomson Microelectronics
60 1536-3 NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications SGS Thomson Microelectronics


Datasheets found :: 44014
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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