No. |
Part Name |
Description |
Manufacturer |
61 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
62 |
1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
63 |
16T4 |
Thiristor - normal series |
SESCOSEM |
64 |
1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
65 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
66 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
67 |
1720-25 |
1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
68 |
1720-3 |
1.7-2.0GHz 3W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
69 |
1720-6 |
1.7-2.0GHz 6W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
70 |
17T4 |
Thiristor - normal series |
SESCOSEM |
71 |
180T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
72 |
181T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
73 |
182T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
74 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
75 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
76 |
183T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
77 |
184T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
78 |
184T2 |
Power NPN transistor - High Voltage |
SESCOSEM |
79 |
185T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
80 |
1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
81 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
82 |
1989-XX |
Tanfilm DIP Resistor Networks |
International Resistive |
83 |
1DI200Z-100 |
Power transistor module for power switching, AC and DC motor controls |
COLLMER SEMICONDUCTOR INC |
84 |
1DI200Z-100 |
POWER TRANSISTOR MODULE |
Fuji Electric |
85 |
1DI200Z-120 |
Power transistor module for power switching, AC and DC motor controls |
COLLMER SEMICONDUCTOR INC |
86 |
1DI200Z-120 |
POWER TRANSISTOR MODULE |
Fuji Electric |
87 |
1DI300A120 |
Power Transistor Module |
Fuji Electric |
88 |
1DI300A140 |
Power Transistor Module |
Fuji Electric |
89 |
1DI300D100 |
Power Transistor Module |
Fuji Electric |
90 |
1DI300M-050 |
Power Transistor Module |
Fuji Electric |
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