| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1419 |
Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series |
Vishay |
| 32 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 33 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 34 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 35 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 36 |
1442 |
Bulk Metal Foil Technology, Dual-In-Line Hermetic Resistor Networks |
Vishay |
| 37 |
1445 |
Bulk Metal Foil Technology, Dual-In-Line Hermetic Resistor Networks |
Vishay |
| 38 |
1446 |
Bulk Metal Foil Technology, Dual-In-Line Hermetic Resistor Networks |
Vishay |
| 39 |
1457 |
Bulk Metal Foil Technology, 18 Pin Dual-In-Line Hermetic Resistor Network |
Vishay |
| 40 |
1460 |
Bulk Metal Foil Technology, 20 Pin Dual-In-Line Hermetic Resistor Network |
Vishay |
| 41 |
1461 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
| 42 |
1463 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
| 43 |
1464 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
| 44 |
1466 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
| 45 |
1989-XX |
Tanfilm DIP Resistor Networks |
International Resistive |
| 46 |
1N3600 |
High conductance ultra fast diode. Working inverse voltage 50 V. |
Fairchild Semiconductor |
| 47 |
1N4449 |
High conductance ultra fast switching diode. Working inverse voltage 75 V. |
Fairchild Semiconductor |
| 48 |
1N4450 |
High conductance ultra fast diode. Working inverse voltage 30 V. |
Fairchild Semiconductor |
| 49 |
1N456 |
Low leakage diode. Working inverse voltage 25V. |
Fairchild Semiconductor |
| 50 |
1N458 |
Low leakage diode. Working inverse voltage 125V. |
Fairchild Semiconductor |
| 51 |
1N461A |
General purpose high conductance diode. Working inverse voltage 25V. |
Fairchild Semiconductor |
| 52 |
1N462A |
General purpose high conductance diode. Working inverse voltage 60V. |
Fairchild Semiconductor |
| 53 |
1N463A |
General purpose high conductance diode. Working inverse voltage 175V. |
Fairchild Semiconductor |
| 54 |
1N4729A |
Voltage regulator diode. Working voltage (nom) 3.6 V . |
Philips |
| 55 |
1N4730A |
Voltage regulator diode. Working voltage (nom) 3.9 V . |
Philips |
| 56 |
1N4731A |
Voltage regulator diode. Working voltage (nom) 4.3 V . |
Philips |
| 57 |
1N4732A |
Voltage regulator diode. Working voltage (nom) 4.7 V . |
Philips |
| 58 |
1N4733A |
Voltage regulator diode. Working voltage (nom) 5.1 V . |
Philips |
| 59 |
1N4734A |
Voltage regulator diode. Working voltage (nom) 5.6 V . |
Philips |
| 60 |
1N4735A |
Voltage regulator diode. Working voltage (nom) 6.2 V . |
Philips |
| | | |
