No. |
Part Name |
Description |
Manufacturer |
91 |
2900 Series |
Temperature Stable Resonator |
Skyworks Solutions |
92 |
2SA1741 |
Silicon powor transistor |
NEC |
93 |
2SA1742 |
Silicon powor transistor |
NEC |
94 |
2SA1743 |
Silicon powor transistor |
NEC |
95 |
2SA1744 |
Silicon powor transistor |
NEC |
96 |
2SD2156 |
Silicon NPN Triple-Diffused Planar Type |
Matsushita Electric Works(Nais) |
97 |
300190-9 |
Bulk Metal Foil Technology Molded Resistor Networks |
Vishay |
98 |
300210-12 |
Bulk Metal Foil Technology Molded Resistor Networks |
Vishay |
99 |
3500 Series |
Temperature Stable Resonator |
Skyworks Solutions |
100 |
37LV128 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV128 is a Serial OTP EPROM device organized internally in a x32 configuration with 131,072 bits and 4096x32 programming word. The 37LV128 is suitable fo |
Microchip |
101 |
37LV36 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 36,288 bits and 1134x32 programming word. The 37LV36 is suitable for m |
Microchip |
102 |
37LV65 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 65,536 bits and 2048x32 programming word. The 37LV36 is suitable for m |
Microchip |
103 |
4036BP |
4 word x 8 bit static RAM (binary addressing) |
TOSHIBA |
104 |
4039BP |
4 word x 8 bit static RAM (direct word-line addressing) |
TOSHIBA |
105 |
4039BP |
4 word x 8 bit static RAM (direct word-line addressing) |
TOSHIBA |
106 |
4300 Series |
Temperature Stable Dielectric Resonators |
Skyworks Solutions |
107 |
49720E |
915 MHz Ceramic Band-Pass Filter |
Skyworks Solutions |
108 |
49720E-TR |
915 MHz Ceramic Band-Pass Filter |
Skyworks Solutions |
109 |
4N47 |
Photo-Transistor Hermetic Optocouplers |
Skyworks Solutions |
110 |
4N48 |
Photo-Transistor Hermetic Optocouplers |
Skyworks Solutions |
111 |
4N49 |
Photo-Transistor Hermetic Optocouplers |
Skyworks Solutions |
112 |
5 GHz Dielectric Cavity |
LTE-U, LTE-LAA Pico Cells 5 GHz Dielectric Cavity |
Skyworks Solutions |
113 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
114 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
115 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
116 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
117 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
118 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
119 |
5962F1120101QXA |
72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology |
Cypress |
120 |
5962F1120101VXA |
72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology |
Cypress |
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