| No. |
Part Name |
Description |
Manufacturer |
| 3121 |
P4C1982L-15JI |
15 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3122 |
P4C1982L-15LM |
15 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3123 |
P4C1982L-15LMB |
15 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3124 |
P4C1982L-15PC |
15 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3125 |
P4C198A-15DM |
15 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3126 |
P4C198A-15DMB |
15 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3127 |
P4C198A-15PI |
15 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3128 |
P4C198AL-15DM |
15 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3129 |
P4C198AL-15DMB |
15 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3130 |
P4C198AL-15PC |
15 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3131 |
P4C198AL-15PI |
15 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3132 |
P4C198L-15DM |
15 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3133 |
P4C198L-15DMB |
15 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3134 |
P4C198L-15PC |
15 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3135 |
P4C198L-15PI |
15 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3136 |
P4C422-15DM |
15 ns,static CMOS RAM, 256 x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3137 |
P4C422-15DMB |
15 ns,static CMOS RAM, 256 x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3138 |
P4C422-15FM |
15 ns,static CMOS RAM, 256 x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3139 |
P4C422-15FMB |
15 ns,static CMOS RAM, 256 x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3140 |
P4C422-15LM |
15 ns,static CMOS RAM, 256 x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3141 |
P4C422-15LMB |
15 ns,static CMOS RAM, 256 x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3142 |
P4C422-15PC |
15 ns,static CMOS RAM, 256 x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3143 |
P4C422-15SC |
15 ns,static CMOS RAM, 256 x 4 ultra high speed |
Performance Semiconductor Corporation |
| 3144 |
P4KE300CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 285 V, Vbr(max) = 315 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3145 |
P4KE350C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 315 V, Vbr(max) = 385 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3146 |
P6KE100CA |
Diode TVS Single Bi-Dir 85.5V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
| 3147 |
P6KE10CA |
Diode TVS Single Bi-Dir 8.55V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
| 3148 |
P6KE11CA |
Diode TVS Single Bi-Dir 9.4V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
| 3149 |
P6KE120CA |
Diode TVS Single Bi-Dir 102V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
| 3150 |
P6KE12CA |
Diode TVS Single Bi-Dir 10.2V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
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