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Datasheets for 15

Datasheets found :: 4586
Page: | 102 | 103 | 104 | 105 | 106 | 107 | 108 | 109 | 110 |
No. Part Name Description Manufacturer
3151 P6KE130CA Diode TVS Single Bi-Dir 111V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3152 P6KE13CA Diode TVS Single Bi-Dir 11.1V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3153 P6KE150CA Diode TVS Single Bi-Dir 128V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3154 P6KE15CA Diode TVS Single Bi-Dir 12.8V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3155 P6KE160CA Diode TVS Single Bi-Dir 136V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3156 P6KE16CA Diode TVS Single Bi-Dir 13.6V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3157 P6KE180CA Diode TVS Single Bi-Dir 154V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3158 P6KE18CA Diode TVS Single Bi-Dir 15.3V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3159 P6KE18CP Diode TVS Single Bi-Dir 15.3V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3160 P6KE200CA Diode TVS Single Bi-Dir 171V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3161 P6KE20CA Diode TVS Single Bi-Dir 17.1V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3162 P6KE22CA Diode TVS Single Bi-Dir 18.8V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3163 P6KE24CA Diode TVS Single Bi-Dir 20.5V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3164 P6KE250CA Diode TVS Single Bi-Dir 214V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3165 P6KE27CA Diode TVS Single Bi-Dir 23.1V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3166 P6KE300CA Diode TVS Single Bi-Dir 256V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3167 P6KE300CA Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 285 V, Vbr(max) = 315 V. Test current It = 1.0 mA. Shanghai Sunrise Electronics
3168 P6KE30CA Diode TVS Single Bi-Dir 25.6V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3169 P6KE33ARL Diode TVS Single Uni-Dir 28V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3170 P6KE33CA Diode TVS Single Bi-Dir 28.2V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3171 P6KE33CP Diode TVS Single Bi-Dir 28.2V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3172 P6KE350C Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 315 V, Vbr(max) = 385 V. Test current It = 1.0 mA. Shanghai Sunrise Electronics
3173 P6KE350CA Diode TVS Single Bi-Dir 300V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3174 P6KE36CA Diode TVS Single Bi-Dir 30.8V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3175 P6KE36CP Diode TVS Single Bi-Dir 30.8V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3176 P6KE39CA Diode TVS Single Bi-Dir 33.3V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3177 P6KE39CP Diode TVS Single Bi-Dir 33.3V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3178 P6KE400CA Diode TVS Single Bi-Dir 342V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3179 P6KE43CA Diode TVS Single Bi-Dir 36.8V 600W 2-Pin DO-15 T/R New Jersey Semiconductor
3180 P6KE440CA Diode TVS Single Bi-Dir 376V 600W 2-Pin DO-15 T/R New Jersey Semiconductor


Datasheets found :: 4586
Page: | 102 | 103 | 104 | 105 | 106 | 107 | 108 | 109 | 110 |



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