No. |
Part Name |
Description |
Manufacturer |
3151 |
P6KE130CA |
Diode TVS Single Bi-Dir 111V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3152 |
P6KE13CA |
Diode TVS Single Bi-Dir 11.1V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3153 |
P6KE150CA |
Diode TVS Single Bi-Dir 128V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3154 |
P6KE15CA |
Diode TVS Single Bi-Dir 12.8V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3155 |
P6KE160CA |
Diode TVS Single Bi-Dir 136V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3156 |
P6KE16CA |
Diode TVS Single Bi-Dir 13.6V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3157 |
P6KE180CA |
Diode TVS Single Bi-Dir 154V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3158 |
P6KE18CA |
Diode TVS Single Bi-Dir 15.3V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3159 |
P6KE18CP |
Diode TVS Single Bi-Dir 15.3V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3160 |
P6KE200CA |
Diode TVS Single Bi-Dir 171V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3161 |
P6KE20CA |
Diode TVS Single Bi-Dir 17.1V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3162 |
P6KE22CA |
Diode TVS Single Bi-Dir 18.8V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3163 |
P6KE24CA |
Diode TVS Single Bi-Dir 20.5V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3164 |
P6KE250CA |
Diode TVS Single Bi-Dir 214V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3165 |
P6KE27CA |
Diode TVS Single Bi-Dir 23.1V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3166 |
P6KE300CA |
Diode TVS Single Bi-Dir 256V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3167 |
P6KE300CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 285 V, Vbr(max) = 315 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
3168 |
P6KE30CA |
Diode TVS Single Bi-Dir 25.6V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3169 |
P6KE33ARL |
Diode TVS Single Uni-Dir 28V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3170 |
P6KE33CA |
Diode TVS Single Bi-Dir 28.2V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3171 |
P6KE33CP |
Diode TVS Single Bi-Dir 28.2V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3172 |
P6KE350C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 315 V, Vbr(max) = 385 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
3173 |
P6KE350CA |
Diode TVS Single Bi-Dir 300V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3174 |
P6KE36CA |
Diode TVS Single Bi-Dir 30.8V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3175 |
P6KE36CP |
Diode TVS Single Bi-Dir 30.8V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3176 |
P6KE39CA |
Diode TVS Single Bi-Dir 33.3V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3177 |
P6KE39CP |
Diode TVS Single Bi-Dir 33.3V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3178 |
P6KE400CA |
Diode TVS Single Bi-Dir 342V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3179 |
P6KE43CA |
Diode TVS Single Bi-Dir 36.8V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
3180 |
P6KE440CA |
Diode TVS Single Bi-Dir 376V 600W 2-Pin DO-15 T/R |
New Jersey Semiconductor |
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