| No. |
Part Name |
Description |
Manufacturer |
| 3121 |
2N5551S |
High Voltage Transistor |
Korea Electronics (KEC) |
| 3122 |
2N5551SC |
High Voltage Transistor |
Korea Electronics (KEC) |
| 3123 |
2N5564 |
Matched High Gain |
Vishay |
| 3124 |
2N5565 |
Matched High Gain |
Vishay |
| 3125 |
2N5566 |
Matched High Gain |
Vishay |
| 3126 |
2N5575 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 3127 |
2N5576 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 3128 |
2N5577 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 3129 |
2N5578 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 3130 |
2N5579 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 3131 |
2N5580 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 3132 |
2N5583 |
PNP silicon high frequency transistor 1.3GHz - 100mAdc |
Motorola |
| 3133 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
| 3134 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
| 3135 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3136 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3137 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3138 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3139 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
| 3140 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3141 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3142 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3143 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3144 |
2N5631 |
High-Voltage High-Power Transistors |
ON Semiconductor |
| 3145 |
2N5631 |
High-Voltage High-Power Transistors |
ON Semiconductor |
| 3146 |
2N5631-D |
High-Voltage - High Power Transistors |
ON Semiconductor |
| 3147 |
2N5631-D |
High-Voltage - High Power Transistors |
ON Semiconductor |
| 3148 |
2N5632 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
| 3149 |
2N5632 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
| 3150 |
2N5633 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
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