| No. |
Part Name |
Description |
Manufacturer |
| 3151 |
2N5633 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
| 3152 |
2N5634 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
| 3153 |
2N5634 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
| 3154 |
2N5655 |
Plastic NPN Silicon High-Voltage Power Transistor |
ON Semiconductor |
| 3155 |
2N5655-D |
Plastic NPN Silicon High-Voltage Power Transistor |
ON Semiconductor |
| 3156 |
2N5659 |
HIGH SPEED NPN TRANSISTOR 120 VOLTS |
Solid State Devices Inc |
| 3157 |
2N5664SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS |
SemeLAB |
| 3158 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 3159 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 3160 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 3161 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 3162 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 3163 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 3164 |
2N5679 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 3165 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 3166 |
2N5680 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 3167 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 3168 |
2N5681 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 3169 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 3170 |
2N5682 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 3171 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 3172 |
2N5683 |
50A complementary silicon high-current, power PNP transistor 300W |
Motorola |
| 3173 |
2N5684 |
50A complementary silicon high-current, power PNP transistor 300W |
Motorola |
| 3174 |
2N5684-D |
High-Current Complementary Silicon Power Transistors |
ON Semiconductor |
| 3175 |
2N5685 |
50A complementary silicon high-current, power NPN transistor 300W |
Motorola |
| 3176 |
2N5686 |
50A complementary silicon high-current, power NPN transistor 300W |
Motorola |
| 3177 |
2N5745 |
PNP SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 3178 |
2N5829 |
High frequency transistor PNP silicon |
Motorola |
| 3179 |
2N5831 |
NPN small signal high voltage general purpose amplifier. |
Fairchild Semiconductor |
| 3180 |
2N5833 |
NPN small signal high voltage general purpose amplifier. |
Fairchild Semiconductor |
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