| No. |
Part Name |
Description |
Manufacturer |
| 3151 |
3DL41 |
EPITAXIAL JUNCTION TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 3152 |
3DL41A |
EPITAXIAL JUNCTION TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 3153 |
3DL41A |
EPITAXIAL JUNCTION TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 3154 |
3DU41 |
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 3155 |
3DU41 |
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 3156 |
3DZ41 |
SILICON DIFFUSED TYPE (GENERAL PURPOSE RECTFIER APPLICATIONS) |
TOSHIBA |
| 3157 |
3GH45 |
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 3158 |
3GH45 |
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 3159 |
3GU41 |
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 3160 |
3GU41 |
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 3161 |
3GWJ2C42 |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 3162 |
3GWJ42 |
SCHOTTKY BARRIER TYPE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 3163 |
3GWJ42C |
N SCHOTTKY BARRIEF TYPE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 3164 |
3JH45 |
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 3165 |
3JH45 |
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 3166 |
3JU41 |
SILICON DIFFUSED TYPE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 3167 |
3N128 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 3168 |
3N140 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
| 3169 |
3N141 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
| 3170 |
3N142 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
| 3171 |
3N152 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
| 3172 |
3N153 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
| 3173 |
3N153 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 3174 |
3N154 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
| 3175 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 3176 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3177 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 3178 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 3179 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 3180 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
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