| No. |
Part Name |
Description |
Manufacturer |
| 3211 |
3N212 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 3212 |
3N213 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 3213 |
3N214 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 3214 |
3N215 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 3215 |
3N216 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 3216 |
3N217 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 3217 |
3NH41 |
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPLY APPLICATIONS) |
TOSHIBA |
| 3218 |
3NH41 |
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPLY APPLICATIONS) |
TOSHIBA |
| 3219 |
3NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 3220 |
3SK0139 |
Silicon N Channel 4-pole MOS Type |
Panasonic |
| 3221 |
3SK0169 |
Silicon N Channel 4-pole MOS Type |
Panasonic |
| 3222 |
3SK0192 |
Silicon N Channel 4-pole MOS Type |
Panasonic |
| 3223 |
3SK101 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 3224 |
3SK102 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 3225 |
3SK114 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 3226 |
3SK115 |
Silicon N Channel dual gate MOS type |
TOSHIBA |
| 3227 |
3SK121 |
GaAs N-Channel Dual gate MES type |
TOSHIBA |
| 3228 |
3SK126 |
N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS) |
TOSHIBA |
| 3229 |
3SK127 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS) |
TOSHIBA |
| 3230 |
3SK142 |
Field-effect Transistors - Silicon N Channel 4-pole MOS Type - For UHF high-gain low-noise amplification |
Panasonic |
| 3231 |
3SK146 |
Silicon N Channel dual gate MOS type Field Effect Transistor, marking UE |
TOSHIBA |
| 3232 |
3SK151 |
N CHANNEL DUAL GATE MOS TYPE (TV TYNER VHF MIXER/ VHF RF AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 3233 |
3SK153 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF/ VHF WIDE BAND RF AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 3234 |
3SK160 |
Silicon N Channel Dual Gate MOS type Field Effect Transistor, marking UL |
TOSHIBA |
| 3235 |
3SK195 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications FM Tuner Applications |
TOSHIBA |
| 3236 |
3SK199 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications |
TOSHIBA |
| 3237 |
3SK202 |
Field-effect Transistor - Silicon N Channel 4-pole MOS Type - For VHF band high-gain low-noise amplification |
Panasonic |
| 3238 |
3SK207 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications |
TOSHIBA |
| 3239 |
3SK20H |
Silicon N-CHANNEL MOS Type FET Transistor, High Input Impedance Pre-Amplifier |
Hitachi Semiconductor |
| 3240 |
3SK21H |
Silicon N-Channel MOS Type FET Transistor, intended for use in Chopper |
Hitachi Semiconductor |
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