| No. |
Part Name |
Description |
Manufacturer |
| 3211 |
MAN6640E |
High Efficiency Red 0.56 inch (14.2 mm) Two Digit Frame Display, commond cathode |
Fairchild Semiconductor |
| 3212 |
MAN6910EG |
High Efficiency Red 0.56 inch (14.2 mm) Two Digit Stick Display, common anode |
Fairchild Semiconductor |
| 3213 |
MAN6940E |
0.56 INCH (14.2 MM) DUAL DIGIT STICK DISPLAY |
Fairchild Semiconductor |
| 3214 |
MAN6941C |
0.56 INCH (14.2 MM) DUAL DIGIT STICK DISPLAY DIAMOND Font |
Fairchild Semiconductor |
| 3215 |
MAN6960E |
0.56 INCH (14.2 MM) SINGLE DIGIT STICK DISPLAY |
Fairchild Semiconductor |
| 3216 |
MAN6961C |
0.56 INCH (14.2 MM) SINGLE DIGIT STICK DISPLAY DIAMOND Font |
Fairchild Semiconductor |
| 3217 |
MAN6980E |
0.56 INCH (14.2 MM) SINGLE DIGIT STICK DISPLAY |
Fairchild Semiconductor |
| 3218 |
MAN6981C |
0.56 INCH (14.2 MM) SINGLE DIGIT STICK DISPLAY DIAMOND Font |
Fairchild Semiconductor |
| 3219 |
MGFC36V3742A |
3.7-4.2 GHz BAND 4W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 3220 |
MGFC39V3742A |
3.7-4.2 BAND 8W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
| 3221 |
MGFC42V3742A |
3.7-4.2 GHz Band 16W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
| 3222 |
MMBZ5256B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 30.0 V. Test current 4.2 mA. |
Chenyi Electronics |
| 3223 |
MR4-187 |
MR4 reflector lamp assembly. 4.2 volts, 1.05 amps. |
Gilway Technical Lamp |
| 3224 |
MR6-187 |
MR6 reflector lamp assembly. 4.2 volts, 1.05 amps. |
Gilway Technical Lamp |
| 3225 |
MSQ6411CLL1 |
High Efficiency Red 0.56 inch (14.2 mm) Three Digit Stick Display |
Fairchild Semiconductor |
| 3226 |
MSQ6911 |
0.56 INCH (14.2 MM) FOUR DIGIT STICK DISPLAY |
Fairchild Semiconductor |
| 3227 |
NE56800 |
4.2 GHz, 25 V, NPN medium power microwave transistor |
NEC |
| 3228 |
NE56803 |
4.2 GHz, 25 V, NPN medium power microwave transistor |
NEC |
| 3229 |
NE56853 |
4.2 GHz, 25 V, NPN medium power microwave transistor |
NEC |
| 3230 |
NE56854 |
4.2 GHz, 25 V, NPN medium power microwave transistor |
NEC |
| 3231 |
NE56887 |
4.2 GHz, 25 V, NPN medium power microwave transistor |
NEC |
| 3232 |
NM100E149 |
-4.2 V to -4.8 V, 256 x 4-bit ECL EPROM |
National Semiconductor |
| 3233 |
NTGS3443B |
-20 V, -4.2 A, Single P-Channel, TSOP-6 |
ON Semiconductor |
| 3234 |
NTHD3102C |
Power MOSFET Complementary, 20 V +5.5 A/-4.2 A, ChipFET¿ |
ON Semiconductor |
| 3235 |
NTJS4151P |
Trench Power MOSFET -20 V, -4.2 A, Single P-Channel, SC-88 |
ON Semiconductor |
| 3236 |
NTMS4N01 |
Power MOSFET 4.2 Amps, 20 Volts |
ON Semiconductor |
| 3237 |
NTMS4N01R2 |
Power MOSFET 4.2 Amps, 20 Volts |
ON Semiconductor |
| 3238 |
NTMS4N01R2-D |
Power MOSFET 4.2 Amps, 20 Volts N-Channel Enhancement-Mode Single SO-8 Package |
ON Semiconductor |
| 3239 |
NVMFS5832NL |
Power MOSFET 40 V, 4.2 mOhm, 120 A, Single N-Channel SO-8FL |
ON Semiconductor |
| 3240 |
PBSS304PX |
60 V, 4.2 A PNP low V_CEsat (BISS) transistor |
Nexperia |
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