| No. |
Part Name |
Description |
Manufacturer |
| 3241 |
PBSS304PX |
60 V, 4.2 A PNP low V_CEsat (BISS) transistor |
NXP Semiconductors |
| 3242 |
PBSS4032PX |
30 V, 4.2 A PNP low VCEsat (BISS) transistor |
Nexperia |
| 3243 |
PBSS4032PX |
30 V, 4.2 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
| 3244 |
PSMN4R0-40YS |
N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET |
Nexperia |
| 3245 |
PSMN4R0-40YS |
N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET |
NXP Semiconductors |
| 3246 |
PSMN4R2-30MLD |
N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology |
Nexperia |
| 3247 |
PSMN4R2-30MLD |
N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology |
NXP Semiconductors |
| 3248 |
QPC3025 |
0.03 - 4.2 GHz High Power, Reflective SPDT Switch |
Qorvo |
| 3249 |
QPL9057 |
0.6 - 4.2 GHz Low Noise Amplifier |
Qorvo |
| 3250 |
RFFM6406 |
408 - 455 MHz, 2.5 - 4.2 V, 1.5 Watt ISM Band Transmit / Receive Module |
Qorvo |
| 3251 |
RFFM6500 |
168 - 171 MHz, 2.7 - 4.2 V, 0.5 Watt ISM Band Transmit / Receive Module |
Qorvo |
| 3252 |
RFFM6900 |
890 - 960 MHz, 2.5 - 4.2 V, 1 Watt ISM Band Transmit / Receive Module |
Qorvo |
| 3253 |
RFFM6901 |
868 - 928 MHz, 2.8 - 4.2 V, ISM Band Transmit / Receive Module with Diversity Switch |
Qorvo |
| 3254 |
RFFM6903 |
890 - 960 MHz, 2.5 - 4.2 V, 1 Watt ISM Band Transmit / Receive Module |
Qorvo |
| 3255 |
RFFM6904 |
868 - 928 MHz, 3 - 4.2 V ISM Band Transmit / Receive Module with Diversity Transfer Switch |
Qorvo |
| 3256 |
SKY12245-492LF |
0.3 to 4.2 GHz, 100 W Compact High-Power SPDT Switch with Integrated Driver |
Skyworks Solutions |
| 3257 |
SMBJ5914A |
1.5W silicon surface mount zener diode. Zener voltage 3.6 V. Test current 104.2 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 3258 |
SMBJ5914B |
1.5W silicon surface mount zener diode. Zener voltage 3.6 V. Test current 104.2 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 3259 |
SMBJ5914C |
1.5W silicon surface mount zener diode. Zener voltage 3.6 V. Test current 104.2 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 3260 |
SMBJ5914D |
1.5W silicon surface mount zener diode. Zener voltage 3.6 V. Test current 104.2 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 3261 |
SPP80N03S2L-04 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 4.2 mOhm |
Infineon |
| 3262 |
STB5N62K3 |
N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 3263 |
STD2N95K5 |
N-channel 950 V, 4.2 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package |
ST Microelectronics |
| 3264 |
STD5N62K3 |
N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 3265 |
STEVAL-ISA117V1 |
Wide range isolated flyback demonstration board, single output 12 V/4.2 W based on the VIPer16LN |
ST Microelectronics |
| 3266 |
STF2N95K5 |
N-channel 950 V, 4.2 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package |
ST Microelectronics |
| 3267 |
STF5N62K3 |
N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
| 3268 |
STP2N95K5 |
N-channel 950 V, 4.2 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package |
ST Microelectronics |
| 3269 |
STP4NC60 |
N - CHANNEL 600V - 1.8 Ohm - 4.2 A TO-220/TO-220FP PowerMESH II MOSFET |
SGS Thomson Microelectronics |
| 3270 |
STP4NC60FP |
N - CHANNEL 600V - 1.8 Ohm - 4.2 A TO-220/TO-220FP PowerMESH II MOSFET |
SGS Thomson Microelectronics |
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