| No. |
Part Name |
Description |
Manufacturer |
| 3271 |
13HSB |
SILICON PLANAR ZENER DIODE |
Semtech |
| 3272 |
13HSC |
SILICON PLANAR ZENER DIODE |
Semtech |
| 3273 |
13PD100-F |
The 13PD100-F is an InGaAs photodiode with a 100mm-diameter photosensitive region packaged in a coaxial fiber pigtailed module. |
Anadigics Inc |
| 3274 |
13PD100-F |
The 13PD100-F is an InGaAs photodiode with a 100mm-diameter photosensitive region packaged in a coaxial fiber pigtailed module. |
Anadigics Inc |
| 3275 |
13PD100-S |
The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
| 3276 |
13PD100-ST |
The 13PD75-ST, -SMA, -SC, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header and aligned ... |
Anadigics Inc |
| 3277 |
13PD100-ST |
The 13PD75-ST, -SMA, -SC, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header and aligned ... |
Anadigics Inc |
| 3278 |
13PD100-TO |
The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region and packaged in a TO-46 header, is the largest ... |
Anadigics Inc |
| 3279 |
13PD150-S |
The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
| 3280 |
13PD150-ST |
The 13PD150-ST, -SMA, -FC, -SC, an InGaAs photodiode with a 150µm-diameter photosensitive region packaged in a TO-46 header ... |
Anadigics Inc |
| 3281 |
13PD150-ST |
The 13PD150-ST, -SMA, -FC, -SC, an InGaAs photodiode with a 150µm-diameter photosensitive region packaged in a TO-46 header ... |
Anadigics Inc |
| 3282 |
13PD150-TO |
The 13PD150-TO, an InGaAs photodiode with a 150µm-diameter photosensitive region and packaged in a TO-46 header, is intended ... |
Anadigics Inc |
| 3283 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3284 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3285 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3286 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 3287 |
1417K4A |
NetLight 1417K4A 1300 nm Laser 2.5 Gbits/s Transceiver |
Agere Systems |
| 3288 |
1417K5A |
NetLight 1417K5A 2.5 Gbits/s 1300 nm Laser Transceiver with Clock and Data Recovery |
Agere Systems |
| 3289 |
1417K5A |
NetLight 1417K5A 2.5 Gbits/s 1300 nm Laser Transceiver with Clock and Data Recovery |
Agere Systems |
| 3290 |
1417K6S |
NetLight 1417K6S 2.5 Gbits/s 1300 nm Laser Transceiver |
Agere Systems |
| 3291 |
1419 |
Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series |
Vishay |
| 3292 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 3293 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 3294 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 3295 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 3296 |
1460 |
Operational Amplifier - High Speed / VMOS Output |
TelCom Semiconductor |
| 3297 |
14600 |
Header / Box Receptacle - PCB Mount |
Framatome Connectors International |
| 3298 |
146028 |
Pin Header Assembly |
Framatome Connectors International |
| 3299 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
| 3300 |
148 RUS |
Aluminum Capacitors, Radial, Ultra High CV per Volume, Semi-Professional |
Vishay |
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