| No. |
Part Name |
Description |
Manufacturer |
| 3301 |
15040-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 75VDC |
NTE Electronics |
| 3302 |
15041-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 90VDC |
NTE Electronics |
| 3303 |
15042-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 110VDC |
NTE Electronics |
| 3304 |
15043-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 145VDC |
NTE Electronics |
| 3305 |
15044-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 230VDC |
NTE Electronics |
| 3306 |
15045-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 300VDC |
NTE Electronics |
| 3307 |
15046-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 350VDC |
NTE Electronics |
| 3308 |
15047-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 470VDC |
NTE Electronics |
| 3309 |
15048-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 600VDC |
NTE Electronics |
| 3310 |
15049AC |
Surge arrester (gas filled). Nominal breakdown voltage 120VAC. |
NTE Electronics |
| 3311 |
15050AC |
Surge arrester (gas filled). Nominal breakdown voltage 240VAC. |
NTE Electronics |
| 3312 |
150K100A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 3313 |
150K20A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 3314 |
150K40A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 3315 |
150K60A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 3316 |
150K80A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 3317 |
150KR100A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 3318 |
150KR20A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 3319 |
150KR40A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 3320 |
150KR60A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 3321 |
150KR80A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 3322 |
150LD11 |
Silicon alloy-diffused junction rectifier 800V 150A |
TOSHIBA |
| 3323 |
150ND11 |
Silicon alloy-diffused junction rectifier 1000V 150A |
TOSHIBA |
| 3324 |
150QD11 |
Silicon alloy-diffused junction rectifier 1200V 150A |
TOSHIBA |
| 3325 |
150TD11 |
Silicon alloy-diffused junction rectifier 1500V 150A |
TOSHIBA |
| 3326 |
150UC11 |
Silicon alloy-diffused junction rectifier 1600V 150A |
TOSHIBA |
| 3327 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 3328 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
| 3329 |
151911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 3330 |
151911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
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