| No. |
Part Name |
Description |
Manufacturer |
| 3271 |
2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 3272 |
2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 3273 |
2SK715 |
N-Channel Junction Silicon FET AM Tuner, RF Amplifier Applications |
SANYO |
| 3274 |
2SK72 |
Silicon N Channel junction dual transistor (completely separated type) |
TOSHIBA |
| 3275 |
2SK772 |
N-Channel Junction Silicon FET AF Amplifier Applications |
SANYO |
| 3276 |
2SK879 |
Field Effect Transistor Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications |
TOSHIBA |
| 3277 |
2SK880 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 3278 |
2SK881 |
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications |
TOSHIBA |
| 3279 |
2SK930 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 3280 |
2SK932 |
N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 3281 |
2SK937 |
N-Channel Junction Silicon FET High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 3282 |
300EXD11 |
Silicon alloy diffused junction rectifier 2500V 300A |
TOSHIBA |
| 3283 |
300FXD11 |
Silicon alloy diffused junction rectifier 3000V 300A |
TOSHIBA |
| 3284 |
300LD11 |
Silicon alloy diffused junction rectifier 350A 800V |
TOSHIBA |
| 3285 |
300ND11 |
Silicon alloy diffused junction rectifier 350A 1000V |
TOSHIBA |
| 3286 |
300QD11 |
Silicon alloy diffused junction rectifier 350A 1200V |
TOSHIBA |
| 3287 |
300TD11 |
Silicon alloy diffused junction rectifier 350A 1500V |
TOSHIBA |
| 3288 |
300WD11 |
Silicon alloy diffused junction rectifier 350A 1800V |
TOSHIBA |
| 3289 |
300YD11 |
Silicon alloy diffused junction rectifier 350A 2000V |
TOSHIBA |
| 3290 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3291 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3292 |
30KW108 |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3293 |
30KW108A |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3294 |
30KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3295 |
30KW120A |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3296 |
30KW132 |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3297 |
30KW132A |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3298 |
30KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3299 |
30KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3300 |
30KW156 |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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