| No. |
Part Name |
Description |
Manufacturer |
| 3301 |
30KW156A |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3302 |
30KW168 |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3303 |
30KW168A |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3304 |
30KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3305 |
30KW180A |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3306 |
30KW198 |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3307 |
30KW198A |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3308 |
30KW216 |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3309 |
30KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3310 |
30KW240 |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3311 |
30KW240A |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3312 |
30KW258 |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3313 |
30KW258A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3314 |
30KW270 |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3315 |
30KW270A |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3316 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3317 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 3318 |
33120A |
Function / Arbitrary Waveform Generator, 15 MHz |
Agilent (Hewlett-Packard) |
| 3319 |
33220A |
Function / Arbitrary Waveform Generator, 20 MHz |
Agilent (Hewlett-Packard) |
| 3320 |
33250A |
Function / Arbitrary Waveform Generator, 80 MHz |
Agilent (Hewlett-Packard) |
| 3321 |
3BZ61 |
Silicon diffused junction rectifier 3A 100V |
TOSHIBA |
| 3322 |
3CC13 |
Silicon diffused junction rectifier 3A 150V |
TOSHIBA |
| 3323 |
3CD13 |
Silicon diffused junction rectifier 3A 150V |
TOSHIBA |
| 3324 |
3DL41 |
EPITAXIAL JUNCTION TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 3325 |
3DL41A |
EPITAXIAL JUNCTION TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 3326 |
3DZ61 |
Silicon diffused junction rectifier 3A 200V |
TOSHIBA |
| 3327 |
3EZ100 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
| 3328 |
3EZ100 |
100 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 3329 |
3EZ100 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 3330 |
3EZ11 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
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