No. |
Part Name |
Description |
Manufacturer |
3271 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
3272 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
3273 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
3274 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
3275 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
3276 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
3277 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
3278 |
2N5954 |
Silicon P-N-P medium-power transistor. -90V, 40W. |
General Electric Solid State |
3279 |
2N5955 |
Silicon P-N-P medium-power transistor. -70V, 40W. |
General Electric Solid State |
3280 |
2N5956 |
Silicon P-N-P medium-power transistor. -50V, 40W. |
General Electric Solid State |
3281 |
2N6027 |
Silicon programmable unijunction transistor, 40V, 150mA |
Planeta |
3282 |
2N6028 |
Silicon programmable unijunction transistor, 40V, 150mA |
Planeta |
3283 |
2N6076 |
PNP silicon transistor. 25V, 100mA. |
General Electric Solid State |
3284 |
2N6188 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
3285 |
2N6189 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
3286 |
2N6192 |
100 V, 5 A high speed PNP transistor |
Solid State Devices Inc |
3287 |
2N6193 |
100 V, 5 A high speed PNP transistor |
Solid State Devices Inc |
3288 |
2N6198 |
12 W, 28 V, 100-200 MHz, VHF communication |
Acrian |
3289 |
2N6199 |
25 W, 28 V, 100-200 MHz, VHF communication |
Acrian |
3290 |
2N6246 |
Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. |
General Electric Solid State |
3291 |
2N6247 |
Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. |
General Electric Solid State |
3292 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
3293 |
2N6249 |
300V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
3294 |
2N6250 |
375V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
3295 |
2N6251 |
450V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
3296 |
2N6253 |
High-power silicon N-P-N transistor. 55V, 115W. |
General Electric Solid State |
3297 |
2N6254 |
High-power silicon N-P-N transistor. 100V, 150W. |
General Electric Solid State |
3298 |
2N6259 |
High voltage, high power transistor. 170V, 250W. |
General Electric Solid State |
3299 |
2N6262 |
High voltage silicon N-P-N transistor. 170V, 150W. |
General Electric Solid State |
3300 |
2N6263 |
Medium power silicon N-P-N transistor. 140V, 20W. |
General Electric Solid State |
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