DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for V,

Datasheets found :: 72591
Page: | 107 | 108 | 109 | 110 | 111 | 112 | 113 | 114 | 115 |
No. Part Name Description Manufacturer
3301 2N6264 Medium power silicon N-P-N transistor. 170V, 50W. General Electric Solid State
3302 2N6315 Power NPN silicon transistor. 7.0 A, 60 V, 90 W. Motorola
3303 2N6316 Power NPN silicon transistor. 7.0 A, 80 V, 90 W. Motorola
3304 2N6317 Power PNP silicon transistor. 7.0 A, 60 V, 90 W. Motorola
3305 2N6318 Power PNP silicon transistor. 7.0 A, 80 V, 90 W. Motorola
3306 2N6322 200 V, 30 A NPN high voltage/high energy Solid State Devices Inc
3307 2N6324 200 V, 30 A NPN high voltage/high energy Solid State Devices Inc
3308 2N6354 120V, 10A, 140W silicon N-P-N planar transistor. General Electric Solid State
3309 2N6367 NPN silicon RF power transistor 9W (PEP) 12.5V, up to 30MHz Motorola
3310 2N6371 High-power silicon N-P-N transistor. 50V, 117W. General Electric Solid State
3311 2N6424 PNP transistor, 225V, 0.25A SemeLAB
3312 2N6467 Silicon P-N-P medium-power transistor. -110V, 40W. General Electric Solid State
3313 2N6468 Silicon P-N-P medium-power transistor. -130V, 40W. General Electric Solid State
3314 2N6469 Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. General Electric Solid State
3315 2N6474 130 V, epitaxial-base NPN selicon versawatt transistor Boca Semiconductor Corporation
3316 2N6500 NPN transistor, 110V, 4A SemeLAB
3317 2N6564 300 V, silicon controlled rectifier Boca Semiconductor Corporation
3318 2N6565 400 V, silicon controlled rectifier Boca Semiconductor Corporation
3319 2N6609 Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. General Electric Solid State
3320 2N6619 12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application Siemens
3321 2N6621 25 V, 25 mA, NPN silicon RF broadband transistor Siemens
3322 2N6676 NPN silicon power transistor. 15 A, 300 V, 175 W. Motorola
3323 2N6677 NPN silicon power transistor. 15 A, 350 V, 175 W. Motorola
3324 2N6678 NPN silicon power transistor. 15 A, 400 V, 175 W. Motorola
3325 2N6781 60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor
3326 2N6782 100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor
3327 2N6796 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Fairchild Semiconductor
3328 2N7000 60 V, 5 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor
3329 2N7000 60 V, N-channel-enhancement TRANSYS Electronics Limited
3330 2N7002 60 V, 300 mA N-channel Trench MOSFET Nexperia


Datasheets found :: 72591
Page: | 107 | 108 | 109 | 110 | 111 | 112 | 113 | 114 | 115 |



© 2024 - www Datasheet Catalog com