No. |
Part Name |
Description |
Manufacturer |
3301 |
2N6264 |
Medium power silicon N-P-N transistor. 170V, 50W. |
General Electric Solid State |
3302 |
2N6315 |
Power NPN silicon transistor. 7.0 A, 60 V, 90 W. |
Motorola |
3303 |
2N6316 |
Power NPN silicon transistor. 7.0 A, 80 V, 90 W. |
Motorola |
3304 |
2N6317 |
Power PNP silicon transistor. 7.0 A, 60 V, 90 W. |
Motorola |
3305 |
2N6318 |
Power PNP silicon transistor. 7.0 A, 80 V, 90 W. |
Motorola |
3306 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
3307 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
3308 |
2N6354 |
120V, 10A, 140W silicon N-P-N planar transistor. |
General Electric Solid State |
3309 |
2N6367 |
NPN silicon RF power transistor 9W (PEP) 12.5V, up to 30MHz |
Motorola |
3310 |
2N6371 |
High-power silicon N-P-N transistor. 50V, 117W. |
General Electric Solid State |
3311 |
2N6424 |
PNP transistor, 225V, 0.25A |
SemeLAB |
3312 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
3313 |
2N6468 |
Silicon P-N-P medium-power transistor. -130V, 40W. |
General Electric Solid State |
3314 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
3315 |
2N6474 |
130 V, epitaxial-base NPN selicon versawatt transistor |
Boca Semiconductor Corporation |
3316 |
2N6500 |
NPN transistor, 110V, 4A |
SemeLAB |
3317 |
2N6564 |
300 V, silicon controlled rectifier |
Boca Semiconductor Corporation |
3318 |
2N6565 |
400 V, silicon controlled rectifier |
Boca Semiconductor Corporation |
3319 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
3320 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
3321 |
2N6621 |
25 V, 25 mA, NPN silicon RF broadband transistor |
Siemens |
3322 |
2N6676 |
NPN silicon power transistor. 15 A, 300 V, 175 W. |
Motorola |
3323 |
2N6677 |
NPN silicon power transistor. 15 A, 350 V, 175 W. |
Motorola |
3324 |
2N6678 |
NPN silicon power transistor. 15 A, 400 V, 175 W. |
Motorola |
3325 |
2N6781 |
60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
3326 |
2N6782 |
100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
3327 |
2N6796 |
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
3328 |
2N7000 |
60 V, 5 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
3329 |
2N7000 |
60 V, N-channel-enhancement |
TRANSYS Electronics Limited |
3330 |
2N7002 |
60 V, 300 mA N-channel Trench MOSFET |
Nexperia |
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