DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for SOL

Datasheets found :: 34816
Page: | 107 | 108 | 109 | 110 | 111 | 112 | 113 | 114 | 115 |
No. Part Name Description Manufacturer
3301 2N5659 HIGH SPEED NPN TRANSISTOR 120 VOLTS Solid State Devices Inc
3302 2N5671 High-current, high-power, high-speed silicon N-P-N planar transistor. General Electric Solid State
3303 2N5672 High-current, high-power, high-speed silicon N-P-N planar transistor. General Electric Solid State
3304 2N5730 Silicon NPN Power Transistor, TO-111 (isolated collector) package Silicon Transistor Corporation
3305 2N5731 Silicon NPN Power Transistor, TO-61 (isolated collector) package Silicon Transistor Corporation
3306 2N5754 2.5-A silicon triac. Voltage(typ) 100 V. General Electric Solid State
3307 2N5754 2.5A Silicon Triacs RCA Solid State
3308 2N5755 2.5-A silicon triac. Voltage(typ) 200 V. General Electric Solid State
3309 2N5755 2.5A Silicon Triacs RCA Solid State
3310 2N5756 2.5-A silicon triac. Voltage(typ) 400 V. General Electric Solid State
3311 2N5756 2.5A Silicon Triacs RCA Solid State
3312 2N5757 2.5-A silicon triac. Voltage(typ) 600 V. General Electric Solid State
3313 2N5757 2.5A Silicon Triacs RCA Solid State
3314 2N5781 Silicon P-N-P epitaxial-base transistor. -80V, 10W. General Electric Solid State
3315 2N5782 Silicon P-N-P epitaxial-base transistor. -65V, 10W. General Electric Solid State
3316 2N5783 Silicon P-N-P epitaxial-base transistor. -45V, 10W. General Electric Solid State
3317 2N5784 Silicon N-P-N epitaxial-base transistor. 80V, 10W. General Electric Solid State
3318 2N5785 Silicon N-P-N epitaxial-base transistor. 65V, 10W. General Electric Solid State
3319 2N5786 Silicon N-P-N epitaxial-base transistor. 45V, 10W. General Electric Solid State
3320 2N5838 High-voltage, high-power silicon N-P-N power transistor. General Electric Solid State
3321 2N5839 High-voltage, high-power silicon N-P-N power transistor. General Electric Solid State
3322 2N5840 High-voltage, high-power silicon N-P-N power transistor. General Electric Solid State
3323 2N5885 High-current, high-power, high-speed power transistor. 60V, 200W. General Electric Solid State
3324 2N5886 High-current, high-power, high-speed power transistor. 80V, 200W. General Electric Solid State
3325 2N5913 Silicon NPN Overalay RF Transistor, 12.5 Volt, for class-C VHF/UHF amplifiers RCA Solid State
3326 2N5914 High-Power Silicon NPN Overlay RF Transistor RCA Solid State
3327 2N5915 High-Power Silicon NPN Overlay RF Transistor RCA Solid State
3328 2N5916 High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE RCA Solid State
3329 2N5917 High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE RCA Solid State
3330 2N5918 10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor RCA Solid State


Datasheets found :: 34816
Page: | 107 | 108 | 109 | 110 | 111 | 112 | 113 | 114 | 115 |



© 2024 - www Datasheet Catalog com