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Datasheets for SOL

Datasheets found :: 34816
Page: | 110 | 111 | 112 | 113 | 114 | 115 | 116 | 117 | 118 |
No. Part Name Description Manufacturer
3391 2N6250 375V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
3392 2N6251 450V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
3393 2N6253 High-power silicon N-P-N transistor. 55V, 115W. General Electric Solid State
3394 2N6254 High-power silicon N-P-N transistor. 100V, 150W. General Electric Solid State
3395 2N6259 High voltage, high power transistor. 170V, 250W. General Electric Solid State
3396 2N6262 High voltage silicon N-P-N transistor. 170V, 150W. General Electric Solid State
3397 2N6263 Medium power silicon N-P-N transistor. 140V, 20W. General Electric Solid State
3398 2N6264 Medium power silicon N-P-N transistor. 170V, 50W. General Electric Solid State
3399 2N6265 2W 2GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
3400 2N6266 10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note RCA Solid State
3401 2N6266 5-W, 2-GHz, Emitter-Balasted Silicon N-P-N Overlay RF Transistor RCA Solid State
3402 2N6267 10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note RCA Solid State
3403 2N6267 10W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
3404 2N6268 2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
3405 2N6269 2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
3406 2N6282 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
3407 2N6283 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
3408 2N6284 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
3409 2N6285 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
3410 2N6286 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
3411 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
3412 2N6288 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
3413 2N6289 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
3414 2N6290 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
3415 2N6291 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
3416 2N6292 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
3417 2N6293 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
3418 2N6322 200 V, 30 A NPN high voltage/high energy Solid State Devices Inc
3419 2N6324 200 V, 30 A NPN high voltage/high energy Solid State Devices Inc
3420 2N6342A 12-A silicon triac. 200 V. General Electric Solid State


Datasheets found :: 34816
Page: | 110 | 111 | 112 | 113 | 114 | 115 | 116 | 117 | 118 |



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