| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2N741A |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 332 |
2N914 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 333 |
2N918 |
High frequency NPN transistor |
FERRANTI |
| 334 |
2N918 |
High frequency transistor |
mble |
| 335 |
2N918 |
High frequency transistor |
mble |
| 336 |
2N918 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 337 |
2N929 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 338 |
2N929 |
Low frequency transistor |
mble |
| 339 |
2N929 |
Low frequency transistor |
mble |
| 340 |
2N930 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 341 |
2N930 |
Low frequency transistor |
mble |
| 342 |
2N930 |
Low frequency transistor |
mble |
| 343 |
2SA1011 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 344 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 345 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 346 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 347 |
2SA1015L |
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 348 |
2SA1048 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 349 |
2SA1048(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications |
TOSHIBA |
| 350 |
2SA1048(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications |
TOSHIBA |
| 351 |
2SA1048L |
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 352 |
2SA1049 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 353 |
2SA1144 |
Silicon PNP epitaxial audio frequency transistor |
TOSHIBA |
| 354 |
2SA1145 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS |
TOSHIBA |
| 355 |
2SA1146 |
Silicon PNP epitaxial transistor, audio frequency, low power amplifier applications |
TOSHIBA |
| 356 |
2SA1150 |
Transistor Silicon PNP Epitaxial Type (PCT process) Low Frequency Amplifier Applications |
TOSHIBA |
| 357 |
2SA1162 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 358 |
2SA1163 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 359 |
2SA1182 |
Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 360 |
2SA1184 |
Silicon PNP epitaxial audio frequency power transistor |
TOSHIBA |
| | | |
