No. |
Part Name |
Description |
Manufacturer |
361 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
362 |
2SA1203 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
363 |
2SA1204 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
364 |
2SA1220 |
PNP silicon transistor for audio frequency and high frequency power amplifier applications |
NEC |
365 |
2SA1220 |
PNP silicon transistor for audio frequency and high frequency power amplifier applications |
NEC |
366 |
2SA1220A |
PNP silicon transistor for audio frequency and high frequency power amplifier applications |
NEC |
367 |
2SA1220A |
PNP silicon transistor for audio frequency and high frequency power amplifier applications |
NEC |
368 |
2SA1223 |
PNP silicon high frequency transistor (This datasheet of the NE88935 is also the datasheet of 2SA1223, see the Electrical Characteristics table) |
NEC |
369 |
2SA1226 |
HIGH FREQUENCY AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
370 |
2SA1228 |
PNP silicon high frequency transistor (This datasheet of NE88912 is also the datasheet of 2SA1228, see the Electrical Characteristics table) |
NEC |
371 |
2SA1245 |
Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
372 |
2SA1256 |
High Frequency Amp Applications |
SANYO |
373 |
2SA1282 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
374 |
2SA1282A |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
375 |
2SA1298 |
Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching Applications |
TOSHIBA |
376 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
377 |
2SA1312 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
378 |
2SA1313 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
379 |
2SA1358 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
380 |
2SA1359 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) LOW SPEED SWITCHING AUDIO FREQUENCY POWER AMPLIFIER |
TOSHIBA |
381 |
2SA1360 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
382 |
2SA1424 |
PNP silicon high frequency transistor (This datasheet of NE88933 is also the datasheet of 2SA1424, see the Electrical Characteristics table) |
NEC |
383 |
2SA1461 |
HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
384 |
2SA1464 |
HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
385 |
2SA1483 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Frequency Amplifier Applications Video Amplifier Applications High Speed SwitcHing Applications |
TOSHIBA |
386 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
387 |
2SA1530A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
388 |
2SA1586 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
389 |
2SA1587 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
390 |
2SA1588 |
Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
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